materials-logo

Journal Browser

Journal Browser

Nanowire-Based Optoelectronics

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (31 December 2019) | Viewed by 6585

Special Issue Editor

Department of Electronic Materials Engineering, Australian National University, Canberra, Australia
Interests: MOCVD; III-V semiconductors; quantum wells; quantum dots; nanowires; lasers; LEDs; photodetectors; solar cells

Special Issue Information

Dear Colleagues,

Semiconductor nanowires (NWs) have received increasing attention in recent years as promising nano building blocks for future highly compact optoelectronic/photonic integrated circuits due to their superior optical and electrical properties arising from their unique, one-dimensional material geometry. Nanowires represent an ideal platform for investigating the rich physics of low dimensional systems, in particular the optoelectronic processes. The light matter interaction at a sub-wavelength scale leads to many intriguing characteristics and properties of light absorption, generation, propagation, and detection, as well as closely related carrier generation, transport, and collection in nanowires, in both single and ensemble (array) forms. To date, almost every type of optoelectronic device has been demonstrated in nanowires, such as light-emitting diodes, lasers, photodetectors, solar cells, and sensors. Some basic NW emitter-waveguide-detector integrated circuits have also been realized.

However, to achieve industry-viable, nanowire-based optoelectronic devices and integrated systems requires the development of advanced simulations, material synthesis, device fabrication, and characterization technologies far more challenging than conventional approaches used for their planar counterparts. Despite enormous progress in the past few decades, there is still a great need for new research and development in the field to realize the full potential of NWs for future optoelectronic applications.

In this Special Issue, we cordially invite submission of manuscripts on Nanowire-based Optoelectronics. Topics may include (but are not limited to) NW material and device theory, modeling, and simulation; NW material synthesis and characterization; and NW device fabrication, characterization, and integration. Full papers, communications, and reviews are all welcome.

Prof. Lan Fu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanowire
  • semiconductor
  • optoelectronics
  • lasers
  • LEDs
  • photodetectors
  • solar cells
  • sensors

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Review

20 pages, 2406 KiB  
Review
Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
by Ziyuan Li, Jeffery Allen, Monica Allen, Hark Hoe Tan, Chennupati Jagadish and Lan Fu
Materials 2020, 13(6), 1400; https://doi.org/10.3390/ma13061400 - 19 Mar 2020
Cited by 48 | Viewed by 5611
Abstract
Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared [...] Read more.
Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives. Full article
(This article belongs to the Special Issue Nanowire-Based Optoelectronics)
Show Figures

Figure 1

Back to TopTop