Special Issue "III-V and II-VI Compound Semiconductor Nanorods: Growth, Properties and Applications"
Deadline for manuscript submissions: 30 April 2018
Prof. Dr. Chua Soo-Jin
1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore
Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Innovis, #08-03, Singapore
3. SMART-LEES, 1 CREATE Way, #10-01 Create Tower, Singapore
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Interests: epitaxial growth of compound semiconductors by MOCVD and MBE; optoelectronic devices: LEDs, semiconductor lasers and HEMTs; quantum effect semiconductor devices; semiconductor heterojunctions; semiconductor epitaxial film defects; semiconductor nanostructures
Semiconductor nanostructures exhibit properties that are different from those of bulk materials. They arise from the restriction of charge carrier motions to lower dimensionality in the form of quantum dots, quantum rods or wires, and quantum wells, leading to modification in the density of states. Discrete energy levels are formed, which modify carrier transport and optical emissions.
Many of the new properties are being exploited to enhance the electrical and optical performance of devices, such as LEDs, semiconductor lasers, transistors, and sensors. This Special Issue focuses on nanowires and nanorods formed from III-V and II-VI compound semiconductors. A great deal of progress has been made to control their morphologies, but they have yet to demonstrate their superior performance in commercial products.
We invite researchers to submit papers or reviews that discuss on the various aspects of nanorods or nanowires listed below:
- Growth techniques: Spontaneous and through templates using various forms of epitaxy, such as MBE, MOCVD, physical vapor transport, aqueous solution, PLD, and magnetron sputtering.
- Nanowires and nanorods morphology: Control on size and shape distributions, such as flat top or pointed tips
- Core-shell and other heterojunctions
- Crystal defects: High resolution TEM and nanostructural analyses
- Characterization: stress, composition gradient and band alignment by XRD, XPS and BEEM
- Optical properties: photoluminescence and electroluminescence
- Electrical properties: carrier mobility and carrier density
- Applications: LEDs, semiconductor lasers, transistors and sensors
Prof. Dr. Chua Soo-Jin
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- Crystal growth
- Crystal defect
- Quantum effects
- Luminescence property
- Semiconductor lasers