Special Issue "Functional Oxide Based Thin-Film Materials"

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystal Engineering".

Deadline for manuscript submissions: 30 September 2018

Special Issue Editor

Guest Editor
Prof. Dr. Dong-Sing Wuu

Department of Materials Science and Engineering, National Chung Hsing University, 145 Xingda Road, Taichung 40227, Taiwan
Website | E-Mail
Interests: Epixaxial materials; thin films and plasma processing; optoelectronic devices

Special Issue Information

Dear Colleagues,

Functional oxide based thin-film materials are extraordinary multifunctional crystals with a huge range of emerging application domains such as sensors, displays, light emitters, photovoltaics, nanotechnology, spintronics, piezoelectric motors, biotechnology, capacitors, transparent electronics, and next-generation memories.

The functional oxide crystal has several favorable properties, including good transparency, high conductivity, wide bandgap, and strong luminescence. Thin-film oxide materials have been grown on various substrates by sputtering, hydrothermal, sol-gel, Plasma CVD, MOCVD, PLD, HVPE, MBE etc. A number of breakthroughs over the past few years have driven an exponential energy in research activity of this field.

We invite investigators to submit papers which discuss the development of functional oxide -based thin-film materials, including thin film, nanostructured, and multilayered forms. Mixing oxide-based alloys with other materials could allow for the possible fabrication of advanced devices. Furthermore, the diluted magnetic crystals and combination with two-dimensional materials are welcomed.

The potential topics include, but again are not limited to:

  • Crystal growth of functional oxide based thin-film materials, including the modelling of crystal growth
  • Property characterization (optic, electric, piezoelectric, ferromagnetic properties, etc.) and their relationships to external conditions, such as electric field, photo pumping, current injection, stress, temperature, etc.
  • Advances in device development of finctional oxide based thin-film materials
  • Microstructure analysis and micromacro correlation of the observed properties and their modelling
  • Characterization or modeling of micro-, nano-domain behavior in functional oxide based crystals
  • Novel applications of diluted magnetic oxide crystals and combination with two-dimensional materials
  • Reliability and stability of the crystal properties, including aging and fatigue, etc.

Prof. Dr. Dong-Sing Wuu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Functional oxide-based compounds
  • Thin film growth
  • Material characterization
  • Device fabrication and applications

Published Papers (4 papers)

View options order results:
result details:
Displaying articles 1-4
Export citation of selected articles as:

Research

Jump to: Review

Open AccessArticle Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry
Crystals 2018, 8(6), 248; https://doi.org/10.3390/cryst8060248
Received: 23 April 2018 / Revised: 31 May 2018 / Accepted: 5 June 2018 / Published: 12 June 2018
PDF Full-text (3396 KB) | HTML Full-text | XML Full-text
Abstract
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited HfO2 film has
[...] Read more.
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited HfO2 film has been studied using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD) and variable angle spectroscopic ellipsometry (VASE). The XPS measurements and analyses revealed the insufficient chemical reaction at the lower oxygen flow rate and the film quality improved at higher oxygen flow rate. Via GIXRD, it was found that the HfO2 films on Si were amorphous in nature, as deposited at lower deposition temperature, while being polycrystalline at higher deposition temperature. The structural phase changes from interface to surface were demonstrated. The values of optical constants and bandgaps and their variations with the growth conditions were determined accurately from VASE and XPS. All analyses indicate that appropriate substrate temperature and oxygen flow are essential to achieve high quality of the AVD-grown HfO2 films. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
Figures

Figure 1

Open AccessArticle Effect of Lithium Doping on Microstructural and Optical Properties of ZnO Nanocrystalline Films Prepared by the Sol-Gel Method
Crystals 2018, 8(5), 228; https://doi.org/10.3390/cryst8050228
Received: 28 April 2018 / Revised: 16 May 2018 / Accepted: 16 May 2018 / Published: 19 May 2018
PDF Full-text (2310 KB) | HTML Full-text | XML Full-text
Abstract
The Zn1−xLixO (x = 0, 0.01, 0.03, and 0.05) nanocrystalline films were synthesized on silicon (Si) substrates by using the sol-gel method. The crystal structure and surface morphology of these films were investigated by X-ray diffraction (XRD) and field
[...] Read more.
The Zn1−xLixO (x = 0, 0.01, 0.03, and 0.05) nanocrystalline films were synthesized on silicon (Si) substrates by using the sol-gel method. The crystal structure and surface morphology of these films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). We observed that the average grain size was gradually reduced with increasing doping Li content. Photoluminescence (PL) spectra show that increasing the Li content will deteriorate the crystalline quality and result in the decrease of ultraviolet emission from the excitonic recombination and the enhancement of visible emission from the recombination between the intrinsic defects. The current-voltage properties of Zn1−xLixO nanocrystalline films were also studied under dark and photo-illumination for photo-detection applications. The normalized photo-to-dark-current ratio (Iphoto − Idark)/Idark has been enhanced from 315 to 4161 by increasing the Li content of the Zn1−xLixO nanocrystalline films from zero to 0.05. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
Figures

Figure 1

Open AccessArticle Epitaxial Crystallization of Precisely Methyl-Substituted Polyethylene Induced by Carbon Nanotubes and Graphene
Crystals 2018, 8(4), 168; https://doi.org/10.3390/cryst8040168
Received: 9 March 2018 / Revised: 11 April 2018 / Accepted: 11 April 2018 / Published: 16 April 2018
PDF Full-text (8391 KB) | HTML Full-text | XML Full-text | Supplementary Files
Abstract
How large of a substituent/branch a polyethylene possesses that can still be induced by nanofillers to form ordered chain structures is interesting, but uncertain. To solve this problem, precisely methyl-substituted polyethylene (PE21M) was chosen as a model to prepare its one-dimensional and two-dimensional
[...] Read more.
How large of a substituent/branch a polyethylene possesses that can still be induced by nanofillers to form ordered chain structures is interesting, but uncertain. To solve this problem, precisely methyl-substituted polyethylene (PE21M) was chosen as a model to prepare its one-dimensional and two-dimensional nanocomposites with carbon nanotubes (CNTs) and graphene via solution crystallization. It is shown that kebab-like and rod-like nanofiller-induced crystals were separately observed on the surfaces of CNTs and graphene and the density of rod-like crystals is significantly less than kebab-like ones. The results of differential scanning calorimetry (DSC) and X-ray diffraction (XRD) reveal that CNTs and graphene cannot induce polymers with the substituent volume greater than, or equal to, 2 Å (methyl) to form ordered lattice structure, but CNTs exhibit the better nucleation effect, providing us with guidance to manipulate the physical performance of polymer composites on the basis of the size of the substituent and the type of nanofiller. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
Figures

Graphical abstract

Review

Jump to: Research

Open AccessReview One-Dimensional Zinc Oxide Nanomaterials for Application in High-Performance Advanced Optoelectronic Devices
Crystals 2018, 8(5), 223; https://doi.org/10.3390/cryst8050223
Received: 27 April 2018 / Revised: 13 May 2018 / Accepted: 13 May 2018 / Published: 18 May 2018
PDF Full-text (88206 KB) | HTML Full-text | XML Full-text
Abstract
Unlike conventional bulk or film materials, one-dimensional (1D) semiconducting zinc oxide (ZnO) nanostructures exhibit excellent photoelectric properties including ultrahigh intrinsic photoelectric gain, multiple light confinement, and subwavelength size effects. Compared with polycrystalline thin films, nanowires usually have high phase purity, no grain boundaries,
[...] Read more.
Unlike conventional bulk or film materials, one-dimensional (1D) semiconducting zinc oxide (ZnO) nanostructures exhibit excellent photoelectric properties including ultrahigh intrinsic photoelectric gain, multiple light confinement, and subwavelength size effects. Compared with polycrystalline thin films, nanowires usually have high phase purity, no grain boundaries, and long-distance order, making them attractive for carrier transport in advanced optoelectronic devices. The properties of one-dimensional nanowires—such as strong optical absorption, light emission, and photoconductive gain—could improve the performance of light-emitting diodes (LEDs), photodetectors, solar cells, nanogenerators, field-effect transistors, and sensors. For example, ZnO nanowires behave as carrier transport channels in photoelectric devices, decreasing the loss of the light-generated carrier. The performance of LEDs and photoelectric detectors based on nanowires can be improved compared with that of devices based on polycrystalline thin films. This article reviews the fabrication methods of 1D ZnO nanostructures—including chemical vapor deposition, hydrothermal reaction, and electrochemical deposition—and the influence of the growth parameters on the growth rate and morphology. Important applications of 1D ZnO nanostructures in optoelectronic devices are described. Several approaches to improve the performance of 1D ZnO-based devices, including surface passivation, localized surface plasmons, and the piezo-phototronic effect, are summarized. Full article
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
Figures

Figure 1

Back to Top