Special Issue "MOVPE Growth of Crystalline Film"

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystal Engineering".

Deadline for manuscript submissions: 31 December 2018

Special Issue Editor

Guest Editor
Dr. Andrey B. Krysa

EPSRC National Epitaxy Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Special Issue Information

Dear Colleagues,

It is my great pleasure to welcome submissions to this Special Issue of Crystals on metalorganic vapour phase epitaxy (MOVPE), the technology that lies at the foundation of modern semiconductor optoelectronics and related research fields and manufacturing.

According to some early UK, German and US patents, the basics of this remarkable crystal growth technology (also known under established terms such as MOCVD, OMVPE and OMCVD) have been known to specialists since at least early 1950’s. The wider interest of the research community and industry in this technology, however, was stimulated by the publications of Manasevit in the late 1960’s which coincided with a growing demand for thin compound semiconductor crystal films and booming semiconductor research.

The critical point in the development of MOVPE was the demonstration by Dupuis of MOVPE-grown hetero-structures and quantum wells with abrupt interfaces in 1977. This opened up further applications, in particular, the practical realization of semiconductor quantum devices, and attracted even greater interest to this technology. Since then, MOVPE has become a major contributor to semiconductor research. For example, MOVPE has facilitated a significant contribution to the race for blue-light emitting sources and hugely stimulated studies on ZnSe- and GaN-based compounds and related physical phenomena in semiconductors. These studies have brought the Nobel Prize in Physics to Akasaki, Amano and Nakamura in 2006, and there are other examples of a close association of MOVPE with the greatest scientific and technological developments marked by this highly prestigious award. In addition to the aforementioned semiconductor hetero-structures (originally proposed by Alferov and Kroemer, Nobel Prize in Physics 2000), one can mention quantum cascade lasers, directly derived from the pioneering studies of Leo Esaki (Nobel Prize in Physics 1973) on semiconductor superlattices, and which can be routinely grown these days by MOVPE.

The impact of MOVPE on modern civilization and our way of life is difficult to overestimate. Of particular significance is the widespread application of telecom lasers and white LEDs, which relay on high-volume manufacturing processes based largely on this technique. Nowadays, there are thousands of industrial MOVPE reactors in operation worldwide and hundreds of research groups actively studying MOVPE crystal growth or relying heavily on the technique for their wider studies. With the extreme purity of precursors available commercially, a reproducible high-precision gas delivery, abrupt reagents’ switching, and with highly informative in-situ optical process monitoring tools, MOVPE has never been a better technique to be used in semiconductor research and manufacturing.

I would like to invite you to submit manuscripts, which cover all research aspects of MOVPE growth and materials and structures grown by this technique. Manuscripts on other related technologies, like metalorganic molecular beam epitaxy, atomic layer epitaxy etc. are also welcome.

Dr. Andrey B. Krysa
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • MOVPE
  • MOCVD
  • Epitaxy
  • Thin crystal film
  • Semiconductor heterostructure
  • Quantum well
  • Quantum dot
  • Nanowire
  • Materials characterization

Published Papers (1 paper)

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Research

Open AccessArticle MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates
Crystals 2018, 8(8), 311; https://doi.org/10.3390/cryst8080311
Received: 4 July 2018 / Revised: 20 July 2018 / Accepted: 26 July 2018 / Published: 31 July 2018
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Abstract
The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type designed for the operation
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The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type designed for the operation under the electrical pumping. Influence of the Si substrate offcut from the [001] direction, thickness of a Ge buffer and insertion of the AlAs/GaAs superlattice between Ge and GaAs on the structural and optical properties of fabricated samples was studied. The measured threshold current densities at room temperatures were 5.5 kA/cm2 and 20 kA/cm2 for lasers operating at 0.99 μm and 1.11 μm respectively. In order to obtain the stimulated emission at wavelengths longer than 1.1 μm, the InGaAs quantum well laser structures with high In content and GaAsP strain-compensating layers were grown both on Ge/Si and GaAs substrates. Structures grown on GaAs exhibited stimulated emission under optical pumping at the wavelengths of up to 1.24 μm at 300 K while those grown on Ge/Si substrates emitted at shorter wavelengths of up to 1.1 μm and only at 77 K. The main reasons for such performance worsening and also some approaches to overcome them are discussed. The obtained results have shown that monolithic integration of direct-gap A3B5 compounds on Si using MOCVD technology is rather promising approach for obtaining the Si-compatible on-chip effective light source. Full article
(This article belongs to the Special Issue MOVPE Growth of Crystalline Film)
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Authors: Nikolay Baidus et al.
Title: Growth of InGaAs / GaAs / AlGaAs laser structures with quantum wells by the MOCVD method on Ge / Si substrates
Abstract: The paper studies the growth of GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer by MOCVD. The influence of the deviation of the substrate on the direction (001), the thickness of the Ge buffer, the use of a buffer consisting of alternating layers of AlAs and GaAs, on the structural and optical properties of the obtained structures was studied. The growth of laser structures with InGaAs strained quantum wells with a high In fraction using GaAsP compensating layers has been carried out and their properties have been investigated.

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