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Electronics 2017, 6(2), 27; doi:10.3390/electronics6020027

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

Department of Physics, Portland State University, Portland, OR 97207, USA
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Academic Editors: Yoke Khin Yap and Zhixian Zhou
Received: 12 February 2017 / Revised: 19 March 2017 / Accepted: 27 March 2017 / Published: 30 March 2017
(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)
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Abstract

Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of γ-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown. View Full-Text
Keywords: atomic layer deposition; heterostructure; pn diode atomic layer deposition; heterostructure; pn diode
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Browning, R.; Kuperman, N.; Moon, B.; Solanki, R. Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure. Electronics 2017, 6, 27.

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