Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure
AbstractMetal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of γ-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown. View Full-Text
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Browning, R.; Kuperman, N.; Moon, B.; Solanki, R. Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure. Electronics 2017, 6, 27.
Browning R, Kuperman N, Moon B, Solanki R. Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure. Electronics. 2017; 6(2):27.Chicago/Turabian Style
Browning, Robert; Kuperman, Neal; Moon, Bill; Solanki, Raj. 2017. "Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure." Electronics 6, no. 2: 27.
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