High Throughput Characterization of Epitaxially Grown Single-Layer MoS2
AbstractThe growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 µm2 and 60 µm2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large-area chemical vapor deposition (CVD)-grown samples. View Full-Text
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Ghasemi, F.; Frisenda, R.; Dumcenco, D.; Kis, A.; Perez de Lara, D.; Castellanos-Gomez, A. High Throughput Characterization of Epitaxially Grown Single-Layer MoS2. Electronics 2017, 6, 28.
Ghasemi F, Frisenda R, Dumcenco D, Kis A, Perez de Lara D, Castellanos-Gomez A. High Throughput Characterization of Epitaxially Grown Single-Layer MoS2. Electronics. 2017; 6(2):28.Chicago/Turabian Style
Ghasemi, Foad; Frisenda, Riccardo; Dumcenco, Dumitru; Kis, Andras; Perez de Lara, David; Castellanos-Gomez, Andres. 2017. "High Throughput Characterization of Epitaxially Grown Single-Layer MoS2." Electronics 6, no. 2: 28.