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Electronics 2017, 6(2), 28; doi:10.3390/electronics6020028

High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

1
Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-nanociencia), Campus de Cantoblanco, E-28049 Madrid, Spain
2
Nanoelectronic Lab, School of Electrical and Computer Engineering, University of Tehran, 14399–56191 Tehran, Iran
3
Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
4
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
5
Instituto de Ciencia de los Materiales de Madrid (ICMM-CSIC), E-28049 Madrid, Spain
*
Authors to whom correspondence should be addressed.
Academic Editors: Yoke Khin Yap and Zhixian Zhou
Received: 21 February 2017 / Revised: 21 March 2017 / Accepted: 28 March 2017 / Published: 31 March 2017
(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)
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Abstract

The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 µm2 and 60 µm2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large-area chemical vapor deposition (CVD)-grown samples. View Full-Text
Keywords: two dimensional materials; chemical vapor deposition; MoS2; reflectance; exciton two dimensional materials; chemical vapor deposition; MoS2; reflectance; exciton
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Ghasemi, F.; Frisenda, R.; Dumcenco, D.; Kis, A.; Perez de Lara, D.; Castellanos-Gomez, A. High Throughput Characterization of Epitaxially Grown Single-Layer MoS2. Electronics 2017, 6, 28.

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