Next Article in Journal
Screening Mississippi River Levees Using Texture-Based and Polarimetric-Based Features from Synthetic Aperture Radar Data
Next Article in Special Issue
Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides
Previous Article in Journal / Special Issue
Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure
Article Menu
Issue 2 (June) cover image

Export Article

Open AccessFeature PaperArticle
Electronics 2017, 6(2), 28; doi:10.3390/electronics6020028

High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-nanociencia), Campus de Cantoblanco, E-28049 Madrid, Spain
Nanoelectronic Lab, School of Electrical and Computer Engineering, University of Tehran, 14399–56191 Tehran, Iran
Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Instituto de Ciencia de los Materiales de Madrid (ICMM-CSIC), E-28049 Madrid, Spain
Authors to whom correspondence should be addressed.
Academic Editors: Yoke Khin Yap and Zhixian Zhou
Received: 21 February 2017 / Revised: 21 March 2017 / Accepted: 28 March 2017 / Published: 31 March 2017
(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)
View Full-Text   |   Download PDF [2685 KB, uploaded 24 April 2017]   |  


The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 µm2 and 60 µm2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large-area chemical vapor deposition (CVD)-grown samples. View Full-Text
Keywords: two dimensional materials; chemical vapor deposition; MoS2; reflectance; exciton two dimensional materials; chemical vapor deposition; MoS2; reflectance; exciton

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Ghasemi, F.; Frisenda, R.; Dumcenco, D.; Kis, A.; Perez de Lara, D.; Castellanos-Gomez, A. High Throughput Characterization of Epitaxially Grown Single-Layer MoS2. Electronics 2017, 6, 28.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top