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Journal: Electronics, 2016
Volume: 5
Number: 31

Article: InAlGaN/GaN HEMTs at Cryogenic Temperatures
Authors: by Ezgi Dogmus, Riad Kabouche, Sylvie Lepilliet, Astrid Linge, Malek Zegaoui, Hichem Ben-Ammar, Marie-Pierre Chauvat, Pierre Ruterana, Piero Gamarra, Cédric Lacam, Maurice Tordjman and Farid Medjdoub
Link: https://www.mdpi.com/2079-9292/5/2/31

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