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Electronics 2016, 5(2), 31;

InAlGaN/GaN HEMTs at Cryogenic Temperatures

Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Av. Poincaré, Villeneuve d’Ascq 59652, France
Centre de recherche sur les Ions, les MAtériaux et la Photonique, Caen 14000, France
Thales Research and Technology, 3-5lab, Av. Augustin Fresnel, RD128, Palaiseau 91767, France
Author to whom correspondence should be addressed.
Academic Editor: Geok Ing Ng
Received: 30 April 2016 / Revised: 8 June 2016 / Accepted: 17 June 2016 / Published: 22 June 2016
(This article belongs to the Special Issue Gallium Nitride Electronics)
Full-Text   |   PDF [867 KB, uploaded 22 June 2016]   |  


We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2·V−1·s−1 combined with a sheet carrier density of 1.93 × 1013 cm−2 leading to a remarkably low sheet resistance of 44 Ω/□ are measured at 4 K. A strong improvement of Direct current (DC) and Radio frequency (RF) characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (fT/fmax) of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 μm technology confirmed the outstanding 2DEG properties. View Full-Text
Keywords: InAlGaN HEMT; cryogenic temperature; microwave InAlGaN HEMT; cryogenic temperature; microwave

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Dogmus, E.; Kabouche, R.; Lepilliet, S.; Linge, A.; Zegaoui, M.; Ben-Ammar, H.; Chauvat, M.-P.; Ruterana, P.; Gamarra, P.; Lacam, C.; Tordjman, M.; Medjdoub, F. InAlGaN/GaN HEMTs at Cryogenic Temperatures. Electronics 2016, 5, 31.

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