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Electronics 2016, 5(3), 32; doi:10.3390/electronics5030032

Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

1
Air Force Institute of Technology, 2950 Hobson Way, Wright-Patterson Air Force Base, Dayton, OH 45433, USA
2
Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Wright-Patterson Air Force Base, Dayton, OH 45433, USA
3
Air Force Research Laboratory, Materials and Manufacturing Directorate, 2977 Hobson Way, Wright-Patterson Air Force Base, Dayton, OH 45433, USA
4
Radio Frequency Micro Devices, Greensboro, NC 27401, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Received: 13 April 2016 / Revised: 2 June 2016 / Accepted: 16 June 2016 / Published: 23 June 2016
(This article belongs to the Special Issue Gallium Nitride Electronics)
View Full-Text   |   Download PDF [2386 KB, uploaded 23 June 2016]   |  

Abstract

The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation) is insufficient to assess lifetime at operating conditions. View Full-Text
Keywords: gallium nitride; HEMT; lifetime testing; reliability; device degradation gallium nitride; HEMT; lifetime testing; reliability; device degradation
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Coutu, R.A.; Lake, R.A.; Christiansen, B.D.; Heller, E.R.; Bozada, C.A.; Poling, B.S.; Via, G.D.; Theimer, J.P.; Tetlak, S.E.; Vetury, R.; Shealy, J.B. Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing. Electronics 2016, 5, 32.

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