Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing
AbstractThe purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation) is insufficient to assess lifetime at operating conditions. View Full-Text
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Coutu, R.A.; Lake, R.A.; Christiansen, B.D.; Heller, E.R.; Bozada, C.A.; Poling, B.S.; Via, G.D.; Theimer, J.P.; Tetlak, S.E.; Vetury, R.; Shealy, J.B. Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing. Electronics 2016, 5, 32.
Coutu RA, Lake RA, Christiansen BD, Heller ER, Bozada CA, Poling BS, Via GD, Theimer JP, Tetlak SE, Vetury R, Shealy JB. Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing. Electronics. 2016; 5(3):32.Chicago/Turabian Style
Coutu, Ronald A.; Lake, Robert A.; Christiansen, Bradley D.; Heller, Eric R.; Bozada, Christopher A.; Poling, Brian S.; Via, Glen D.; Theimer, James P.; Tetlak, Stephen E.; Vetury, Ramakrishna; Shealy, Jeffrey B. 2016. "Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing." Electronics 5, no. 3: 32.