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Electronics 2016, 5(2), 28; doi:10.3390/electronics5020028

An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

1
Department of Electrophysics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
2
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
3
National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan
4
Epistar, 22 Keya Road, Daya, Central Taiwan Science Park, Taichung 42881, Taiwan
5
Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
6
Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 11529, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Received: 14 March 2016 / Revised: 26 May 2016 / Accepted: 27 May 2016 / Published: 2 June 2016
(This article belongs to the Special Issue Gallium Nitride Electronics)
View Full-Text   |   Download PDF [1672 KB, uploaded 2 June 2016]   |  

Abstract

This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed ID under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications. View Full-Text
Keywords: GaN; high electron mobility transistor (HEMT); current collapse GaN; high electron mobility transistor (HEMT); current collapse
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Tzou, A.-J.; Hsieh, D.-H.; Chen, S.-H.; Liao, Y.-K.; Li, Z.-Y.; Chang, C.-Y.; Kuo, H.-C. An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors. Electronics 2016, 5, 28.

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