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Electronics 2016, 5(2), 25; doi:10.3390/electronics5020025

GaN Monolithic Power Amplifiers for Microwave Backhaul Applications

1
Centre for High Frequency Engineering, Cardiff University, CF103AT Cardiff, Wales, UK
2
DET, Politecnico di Torino, Corso Duca degli Abruzzi, 24, 10129 Torino, Italy
*
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Received: 10 March 2016 / Revised: 12 May 2016 / Accepted: 25 May 2016 / Published: 1 June 2016
(This article belongs to the Special Issue Gallium Nitride Electronics)
View Full-Text   |   Download PDF [1059 KB, uploaded 1 June 2016]   |  

Abstract

Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz) but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile communications. This contribution presents three linear power amplifiers realized on 0.25 μ m Gallium Nitride on Silicon Carbide monolithic integrated circuits for microwave backhaul applications: two combined power amplifiers working in the backhaul band around 7 GHz, and a more challenging third one working in the higher 15 GHz band. Architectures and main design steps are described, highlighting the pros and cons of Gallium Nitride with respect to the reference technology which, for these applications, is represented by gallium arsenide. View Full-Text
Keywords: Gallium Nitride; MMIC; power amplifiers; microwave backhaul Gallium Nitride; MMIC; power amplifiers; microwave backhaul
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Quaglia, R.; Camarchia, V.; Pirola, M.; Ghione, G. GaN Monolithic Power Amplifiers for Microwave Backhaul Applications. Electronics 2016, 5, 25.

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