GaN Monolithic Power Amplifiers for Microwave Backhaul Applications
Centre for High Frequency Engineering, Cardiff University, CF103AT Cardiff, Wales, UK
DET, Politecnico di Torino, Corso Duca degli Abruzzi, 24, 10129 Torino, Italy
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Received: 10 March 2016 / Revised: 12 May 2016 / Accepted: 25 May 2016 / Published: 1 June 2016
Gallium nitride integrated technology is very promising not only for wireless applications at mobile frequencies (below 6 GHz) but also for network backhaul radiolink deployment, now under deep revision for the incoming 5G generation of mobile communications. This contribution presents three linear power amplifiers realized on 0.25
m Gallium Nitride on Silicon Carbide monolithic integrated circuits for microwave backhaul applications: two combined power amplifiers working in the backhaul band around 7 GHz, and a more challenging third one working in the higher 15 GHz band. Architectures and main design steps are described, highlighting the pros and cons of Gallium Nitride with respect to the reference technology which, for these applications, is represented by gallium arsenide.
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MDPI and ACS Style
Quaglia, R.; Camarchia, V.; Pirola, M.; Ghione, G. GaN Monolithic Power Amplifiers for Microwave Backhaul Applications. Electronics 2016, 5, 25.
Quaglia R, Camarchia V, Pirola M, Ghione G. GaN Monolithic Power Amplifiers for Microwave Backhaul Applications. Electronics. 2016; 5(2):25.
Quaglia, Roberto; Camarchia, Vittorio; Pirola, Marco; Ghione, Giovanni. 2016. "GaN Monolithic Power Amplifiers for Microwave Backhaul Applications." Electronics 5, no. 2: 25.
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