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Electronics 2016, 5(2), 14; doi:10.3390/electronics5020014

Gate Stability of GaN-Based HEMTs with P-Type Gate

1
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy
2
IMEC, Kapeldreef 75, 3001 Heverlee, Belgium
*
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Received: 1 February 2016 / Revised: 14 March 2016 / Accepted: 15 March 2016 / Published: 25 March 2016
(This article belongs to the Special Issue Gallium Nitride Electronics)
View Full-Text   |   Download PDF [2288 KB, uploaded 25 March 2016]   |  

Abstract

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress experiment, the devices show a stable behavior up to VGS = 10 V, and a catastrophic failure happened for higher voltages; (iii) failure consists in the creation of shunt paths under the gate, of which the position can be identified by electroluminescence (EL) measurements; (iv) the EL spectra emitted by the devices consists of a broad emission band, centered around 500–550 nm, related to the yellow-luminescence of GaN; and (v) when submitted to a constant voltage stress tests, the p-GaN gate can show a time-dependent failure, and the time to failure follows a Weibull distribution. View Full-Text
Keywords: gallium nitride; high electron mobility transistor; degradation; step stress gallium nitride; high electron mobility transistor; degradation; step stress
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Meneghini, M.; Rossetto, I.; Rizzato, V.; Stoffels, S.; Van Hove, M.; Posthuma, N.; Wu, T.-L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E. Gate Stability of GaN-Based HEMTs with P-Type Gate. Electronics 2016, 5, 14.

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