Gate Stability of GaN-Based HEMTs with P-Type Gate
AbstractThis paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress experiment, the devices show a stable behavior up to VGS = 10 V, and a catastrophic failure happened for higher voltages; (iii) failure consists in the creation of shunt paths under the gate, of which the position can be identified by electroluminescence (EL) measurements; (iv) the EL spectra emitted by the devices consists of a broad emission band, centered around 500–550 nm, related to the yellow-luminescence of GaN; and (v) when submitted to a constant voltage stress tests, the p-GaN gate can show a time-dependent failure, and the time to failure follows a Weibull distribution. View Full-Text
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Meneghini, M.; Rossetto, I.; Rizzato, V.; Stoffels, S.; Van Hove, M.; Posthuma, N.; Wu, T.-L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E. Gate Stability of GaN-Based HEMTs with P-Type Gate. Electronics 2016, 5, 14.
Meneghini M, Rossetto I, Rizzato V, Stoffels S, Van Hove M, Posthuma N, Wu T-L, Marcon D, Decoutere S, Meneghesso G, Zanoni E. Gate Stability of GaN-Based HEMTs with P-Type Gate. Electronics. 2016; 5(2):14.Chicago/Turabian Style
Meneghini, Matteo; Rossetto, Isabella; Rizzato, Vanessa; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico. 2016. "Gate Stability of GaN-Based HEMTs with P-Type Gate." Electronics 5, no. 2: 14.