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Electronics 2016, 5(1), 13; doi:10.3390/electronics5010013

Graphene and Two-Dimensional Materials for Optoelectronic Applications

Department of Electrical Engineering and Computer Science, University of Siegen, Hölderlinstr. 3, 57076 Siegen, Germany
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Academic Editor: Frank Schwierz
Received: 21 January 2016 / Revised: 28 February 2016 / Accepted: 4 March 2016 / Published: 21 March 2016
(This article belongs to the Special Issue Two-Dimensional Electronics - Prospects and Challenges)
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Abstract

This article reviews optoelectronic devices based on graphene and related two-dimensional (2D) materials. The review includes basic considerations of process technology, including demonstrations of 2D heterostructure growth, and comments on the scalability and manufacturability of the growth methods. We then assess the potential of graphene-based transparent conducting electrodes. A major part of the review describes photodetectors based on lateral graphene p-n junctions and Schottky diodes. Finally, the progress in vertical devices made from 2D/3D heterojunctions, as well as all-2D heterostructures is discussed. View Full-Text
Keywords: graphene; MoS2; TMD; photodetectors; 2D materials; heterostructure graphene; MoS2; TMD; photodetectors; 2D materials; heterostructure
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Bablich, A.; Kataria, S.; Lemme, M.C. Graphene and Two-Dimensional Materials for Optoelectronic Applications. Electronics 2016, 5, 13.

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