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Electronics 2015, 4(4), 1090-1100;

Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

Laboratory for Photonics and Nanostructures, Unité Propre de Recherche (UPR20), Centre National de la Recherche Scientifique (CNRS), Route de Nozay, 91460 Marcoussis, France
School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham NG7 2RD, UK
Department of Physics, College of Science, Box 36, Sultan Qaboos University, Al Khoud 123, Oman
Institute Matériaux Microélectronique Nanosciences de Provence, Unité Mixte de Recherche (UMR 7334), Centre National de la Recherche Scientifique (CNRS), Université Aix-Marseille, Av. Normandie-Niemen, 13397 Marseille Cedex 20, France
Diamond Sensors Laboratory (DSL), Laboratoire d’Intégration des Systèmes et des Technologies (LIST), Commissariat à l'Énergie Atomique et aux énergies alternatives (CEA), 91191 Gif-sur-Yvette Cedex, France
Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, 57070 Metz, France
These authors contributed equally to this work.
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Received: 2 November 2015 / Revised: 26 November 2015 / Accepted: 1 December 2015 / Published: 4 December 2015
(This article belongs to the Special Issue Gallium Nitride Electronics)
Full-Text   |   PDF [477 KB, uploaded 4 December 2015]   |  


The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction. View Full-Text
Keywords: deep level transient spectroscopy (DLTS); beta irradiation; GaN p-i-n diodes; activation energy deep level transient spectroscopy (DLTS); beta irradiation; GaN p-i-n diodes; activation energy

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Belahsene, S.; Al Saqri, N.A.; Jameel, D.; Mesli, A.; Martinez, A.; de Sanoit, J.; Ougazzaden, A.; Salvestrini, J.P.; Ramdane, A.; Henini, M. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation. Electronics 2015, 4, 1090-1100.

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