Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation
AbstractThe effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction. View Full-Text
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Belahsene, S.; Al Saqri, N.A.; Jameel, D.; Mesli, A.; Martinez, A.; de Sanoit, J.; Ougazzaden, A.; Salvestrini, J.P.; Ramdane, A.; Henini, M. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation. Electronics 2015, 4, 1090-1100.
Belahsene S, Al Saqri NA, Jameel D, Mesli A, Martinez A, de Sanoit J, Ougazzaden A, Salvestrini JP, Ramdane A, Henini M. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation. Electronics. 2015; 4(4):1090-1100.Chicago/Turabian Style
Belahsene, Sofiane; Al Saqri, Noor A.; Jameel, Dler; Mesli, Abdelmadjid; Martinez, Anthony; de Sanoit, Jacques; Ougazzaden, Abdallah; Salvestrini, Jean P.; Ramdane, Abderrahim; Henini, Mohamed. 2015. "Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation." Electronics 4, no. 4: 1090-1100.