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Electronics 2015, 4(4), 1090-1100; doi:10.3390/electronics4041090

Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

1
Laboratory for Photonics and Nanostructures, Unité Propre de Recherche (UPR20), Centre National de la Recherche Scientifique (CNRS), Route de Nozay, 91460 Marcoussis, France
2
School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham NG7 2RD, UK
3
Department of Physics, College of Science, Box 36, Sultan Qaboos University, Al Khoud 123, Oman
4
Institute Matériaux Microélectronique Nanosciences de Provence, Unité Mixte de Recherche (UMR 7334), Centre National de la Recherche Scientifique (CNRS), Université Aix-Marseille, Av. Normandie-Niemen, 13397 Marseille Cedex 20, France
5
Diamond Sensors Laboratory (DSL), Laboratoire d’Intégration des Systèmes et des Technologies (LIST), Commissariat à l'Énergie Atomique et aux énergies alternatives (CEA), 91191 Gif-sur-Yvette Cedex, France
6
Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, 57070 Metz, France
These authors contributed equally to this work.
*
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Received: 2 November 2015 / Revised: 26 November 2015 / Accepted: 1 December 2015 / Published: 4 December 2015
(This article belongs to the Special Issue Gallium Nitride Electronics)
View Full-Text   |   Download PDF [477 KB, uploaded 4 December 2015]   |  

Abstract

The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction. View Full-Text
Keywords: deep level transient spectroscopy (DLTS); beta irradiation; GaN p-i-n diodes; activation energy deep level transient spectroscopy (DLTS); beta irradiation; GaN p-i-n diodes; activation energy
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MDPI and ACS Style

Belahsene, S.; Al Saqri, N.A.; Jameel, D.; Mesli, A.; Martinez, A.; de Sanoit, J.; Ougazzaden, A.; Salvestrini, J.P.; Ramdane, A.; Henini, M. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation. Electronics 2015, 4, 1090-1100.

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