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Electronics 2016, 5(2), 15; doi:10.3390/electronics5020015

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

1
Research Center of Ion Beam Technology, Hosei University, 3-7-2 Kajino-cho, Koganei-shi, Tokyo 184-8584, Japan
2
Engineering Department, Sciocs Company, Ltd., 880 Isagosawa-cho, Hitachi-shi, Hitachi, Ibaraki 319-1418, Japan
3
Research Center for Micro-Nano Technology, Hosei University, 3-11-15 Midori-cho, Koganei-shi, Tokyo 184-0003, Japan
4
Graduate School of Science and Engineering, Hosei University, 3-7-2 Kajino-cho, Koganei-shi, Tokyo 184-8584, Japan
*
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Received: 29 January 2016 / Revised: 19 March 2016 / Accepted: 25 March 2016 / Published: 31 March 2016
(This article belongs to the Special Issue Gallium Nitride Electronics)
View Full-Text   |   Download PDF [2085 KB, uploaded 31 March 2016]   |  

Abstract

Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/cm (SiO2 (k = 3.9)). The diodes were fabricated using the high-k mixed oxide of SiO2 and CeO2 with k = 12.3. I–V characteristics of the diode with a field plate showed a breakdown voltage above 2 kV with an increased avalanche resistance. This means that the electric field reduces at the periphery of the mesa-etched p-n junction and is uniformly formed across the whole p-n junction. It is clear that high-k dielectric film passivation and filed plate termination are essential techniques for GaN power devices. View Full-Text
Keywords: GaN; high-k; diode; power semiconductor devices; Cellium oxide GaN; high-k; diode; power semiconductor devices; Cellium oxide
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Yoshino, M.; Horikiri, F.; Ohta, H.; Yamamoto, Y.; Mishima, T.; Nakamura, T. High-k Dielectric Passivation for GaN Diode with a Field Plate Termination. Electronics 2016, 5, 15.

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