High-k Dielectric Passivation for GaN Diode with a Field Plate Termination
AbstractVertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/cm (SiO2 (k = 3.9)). The diodes were fabricated using the high-k mixed oxide of SiO2 and CeO2 with k = 12.3. I–V characteristics of the diode with a field plate showed a breakdown voltage above 2 kV with an increased avalanche resistance. This means that the electric field reduces at the periphery of the mesa-etched p-n junction and is uniformly formed across the whole p-n junction. It is clear that high-k dielectric film passivation and filed plate termination are essential techniques for GaN power devices. View Full-Text
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Yoshino, M.; Horikiri, F.; Ohta, H.; Yamamoto, Y.; Mishima, T.; Nakamura, T. High-k Dielectric Passivation for GaN Diode with a Field Plate Termination. Electronics 2016, 5, 15.
Yoshino M, Horikiri F, Ohta H, Yamamoto Y, Mishima T, Nakamura T. High-k Dielectric Passivation for GaN Diode with a Field Plate Termination. Electronics. 2016; 5(2):15.Chicago/Turabian Style
Yoshino, Michitaka; Horikiri, Fumimasa; Ohta, Hiroshi; Yamamoto, Yasuhiro; Mishima, Tomoyoshi; Nakamura, Tohru. 2016. "High-k Dielectric Passivation for GaN Diode with a Field Plate Termination." Electronics 5, no. 2: 15.
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