Next Issue

Table of Contents

Electronics, Volume 1, Issue 1 (September 2012), Pages 1-31

  • Issues are regarded as officially published after their release is announced to the table of contents alert mailing list.
  • You may sign up for e-mail alerts to receive table of contents of newly released issues.
  • PDF is the official format for papers published in both, html and pdf forms. To view the papers in pdf format, click on the "PDF Full-text" link, and use the free Adobe Readerexternal link to open them.
View options order results:
result details:
Displaying articles 1-3
Export citation of selected articles as:

Editorial

Jump to: Research

Open AccessEditorial Electronics — A New Multidisciplinary Open Access Journal
Electronics 2012, 1(1), 1-2; doi:10.3390/electronics1010001
Received: 27 December 2011 / Accepted: 28 December 2011 / Published: 28 December 2011
PDF Full-text (102 KB) | HTML Full-text | XML Full-text
Abstract
The proliferation of electronic devices has profoundly affected all aspects of modern life. Large populations of people worldwide are now acclimated to the use of modern electronic devices on a daily basis. Giant industrial corporations, commercial companies and small businesses all use [...] Read more.
The proliferation of electronic devices has profoundly affected all aspects of modern life. Large populations of people worldwide are now acclimated to the use of modern electronic devices on a daily basis. Giant industrial corporations, commercial companies and small businesses all use a variety of computing, communications and electronic devices to increase their productivity, enhance market research and improve customer support and satisfaction. [...] Full article

Research

Jump to: Editorial

Open AccessArticle Multiple Bit Error Tolerant Galois Field Architectures Over GF (2m)
Electronics 2012, 1(1), 3-22; doi:10.3390/electronics1010003
Received: 14 May 2012 / Revised: 29 May 2012 / Accepted: 11 June 2012 / Published: 26 June 2012
PDF Full-text (1066 KB) | HTML Full-text | XML Full-text
Abstract
Radiation induced transient faults like single event upsets (SEU) and multiple event upsets (MEU) in memories are well researched. As a result of the technology scaling, it is observed that the logic blocks are also vulnerable to malfunctioning when they are deployed [...] Read more.
Radiation induced transient faults like single event upsets (SEU) and multiple event upsets (MEU) in memories are well researched. As a result of the technology scaling, it is observed that the logic blocks are also vulnerable to malfunctioning when they are deployed in radiation prone environment. However, the current literature is lacking efforts to mitigate such issues in the digital logic circuits when exposed to natural radiation prone environment or when they are subjected to malicious attacks by an eavesdropper using highly energized particles. This may lead to catastrophe in critical applications such as widely used cryptographic hardware. In this paper, novel dynamic error correction architectures, based on the BCH codes, is proposed for correcting multiple errors which makes the circuits robust against radiation induced faults irrespective of the location of the errors. As a benchmark test case, the finite field multiplier circuit is considered as the functional block which can be the target for major attacks. The proposed scheme has the capability to handle stuck-at faults that are also a major cause of failure affecting the overall yield of a nano-CMOS integrated chip. The experimental results show that the proposed dynamic error detection and correction architecture results in 50% reduction in critical path delay by dynamically bypassing the error correction logic when no error is present. The area overhead for the larger multiplier is within 150% which is 33% lower than the TMR and comparable to 130% overhead of single error correcting Hamming and LDPC based techniques. Full article
(This article belongs to the Special Issue Feature Papers)
Open AccessArticle Radiation Effects in Carbon Nanoelectronics
Electronics 2012, 1(1), 23-31; doi:10.3390/electronics1010023
Received: 27 April 2012 / Revised: 15 June 2012 / Accepted: 19 June 2012 / Published: 3 July 2012
Cited by 15 | PDF Full-text (354 KB) | HTML Full-text | XML Full-text
Abstract
We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard [...] Read more.
We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices. Full article
(This article belongs to the Special Issue Feature Papers)
Figures

Journal Contact

MDPI AG
Electronics Editorial Office
St. Alban-Anlage 66, 4052 Basel, Switzerland
electronics@mdpi.com
Tel. +41 61 683 77 34
Fax: +41 61 302 89 18
Editorial Board
Contact Details Submit to Electronics
Back to Top