Electronics 2012, 1(1), 23-31; doi:10.3390/electronics1010023
Article

Radiation Effects in Carbon Nanoelectronics

Cory D. Cress 1,* email, Julian J. McMorrow 2 , Jeremy T. Robinson 1 , Brian J. Landi 3 email, Seth M. Hubbard 4 email and Scott R. Messenger 1
1 Electronics Science & Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375, USA 2 Global Strategies Group (North America) Inc., Crofton, MD 21114, USA 3 Chemical & Biomedical Engineering Department, Rochester Institute of Technology, Rochester, NY 14623, USA 4 Physics Department, Rochester Institute of Technology, Rochester, NY 14623, USA
* Author to whom correspondence should be addressed.
Received: 27 April 2012; in revised form: 15 June 2012 / Accepted: 19 June 2012 / Published: 3 July 2012
(This article belongs to the Special Issue Feature Papers)
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Abstract: We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices.
Keywords: single walled carbon nanotubes; graphene; total ionizing dose; TID; radiation hardening; FET; SWCNT; carbon nanoelectronics

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MDPI and ACS Style

Cress, C.D.; McMorrow, J.J.; Robinson, J.T.; Landi, B.J.; Hubbard, S.M.; Messenger, S.R. Radiation Effects in Carbon Nanoelectronics. Electronics 2012, 1, 23-31.

AMA Style

Cress CD, McMorrow JJ, Robinson JT, Landi BJ, Hubbard SM, Messenger SR. Radiation Effects in Carbon Nanoelectronics. Electronics. 2012; 1(1):23-31.

Chicago/Turabian Style

Cress, Cory D.; McMorrow, Julian J.; Robinson, Jeremy T.; Landi, Brian J.; Hubbard, Seth M.; Messenger, Scott R. 2012. "Radiation Effects in Carbon Nanoelectronics." Electronics 1, no. 1: 23-31.

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