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Radiation Effects in Carbon Nanoelectronics
Electronics Science & Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375, USA
Global Strategies Group (North America) Inc., Crofton, MD 21114, USA
Chemical & Biomedical Engineering Department, Rochester Institute of Technology, Rochester, NY 14623, USA
Physics Department, Rochester Institute of Technology, Rochester, NY 14623, USA
* Author to whom correspondence should be addressed.
Received: 27 April 2012; in revised form: 15 June 2012 / Accepted: 19 June 2012 / Published: 3 July 2012
Abstract: We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices.
Keywords: single walled carbon nanotubes; graphene; total ionizing dose; TID; radiation hardening; FET; SWCNT; carbon nanoelectronics
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MDPI and ACS Style
Cress, C.D.; McMorrow, J.J.; Robinson, J.T.; Landi, B.J.; Hubbard, S.M.; Messenger, S.R. Radiation Effects in Carbon Nanoelectronics. Electronics 2012, 1, 23-31.
Cress CD, McMorrow JJ, Robinson JT, Landi BJ, Hubbard SM, Messenger SR. Radiation Effects in Carbon Nanoelectronics. Electronics. 2012; 1(1):23-31.
Cress, Cory D.; McMorrow, Julian J.; Robinson, Jeremy T.; Landi, Brian J.; Hubbard, Seth M.; Messenger, Scott R. 2012. "Radiation Effects in Carbon Nanoelectronics." Electronics 1, no. 1: 23-31.