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Electronics 2012, 1(1), 23-31; doi:10.3390/electronics1010023
Article

Radiation Effects in Carbon Nanoelectronics

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Received: 27 April 2012 / Revised: 15 June 2012 / Accepted: 19 June 2012 / Published: 3 July 2012
(This article belongs to the Special Issue Feature Papers)
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Abstract

We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices.
Keywords: single walled carbon nanotubes; graphene; total ionizing dose; TID; radiation hardening; FET; SWCNT; carbon nanoelectronics single walled carbon nanotubes; graphene; total ionizing dose; TID; radiation hardening; FET; SWCNT; carbon nanoelectronics
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Cress, C.D.; McMorrow, J.J.; Robinson, J.T.; Landi, B.J.; Hubbard, S.M.; Messenger, S.R. Radiation Effects in Carbon Nanoelectronics. Electronics 2012, 1, 23-31.

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