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Electronics 2012, 1(1), 23-31; doi:10.3390/electronics1010023

Radiation Effects in Carbon Nanoelectronics

1
Electronics Science & Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375, USA
2
Global Strategies Group (North America) Inc., Crofton, MD 21114, USA
3
Chemical & Biomedical Engineering Department, Rochester Institute of Technology, Rochester, NY 14623, USA
4
Physics Department, Rochester Institute of Technology, Rochester, NY 14623, USA
*
Author to whom correspondence should be addressed.
Received: 27 April 2012 / Revised: 15 June 2012 / Accepted: 19 June 2012 / Published: 3 July 2012
(This article belongs to the Special Issue Feature Papers)
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Abstract

We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices. View Full-Text
Keywords: single walled carbon nanotubes; graphene; total ionizing dose; TID; radiation hardening; FET; SWCNT; carbon nanoelectronics single walled carbon nanotubes; graphene; total ionizing dose; TID; radiation hardening; FET; SWCNT; carbon nanoelectronics
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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Cress, C.D.; McMorrow, J.J.; Robinson, J.T.; Landi, B.J.; Hubbard, S.M.; Messenger, S.R. Radiation Effects in Carbon Nanoelectronics. Electronics 2012, 1, 23-31.

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