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J. Low Power Electron. Appl. 2016, 6(3), 17; doi:10.3390/jlpea6030017

A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI

1
Technology Research Center, University of Turku, Joukahaisenkatu 3, Turku 20520, Finland
2
VTT Technical Research Center, Vuorimiehentie 3, Espoo 02044, Finland
This paper is an extension of our article from A-SSCC 2015 titled “A Fully Integrated Self-Oscillating Switched-Capacitor DC-DC Converter for Near-Threshold Loads”.
*
Author to whom correspondence should be addressed.
Academic Editor: Tony Tae-Hyoung Kim
Received: 18 May 2016 / Revised: 26 August 2016 / Accepted: 29 August 2016 / Published: 8 September 2016
(This article belongs to the Special Issue Ultra-Low Power VLSI Design for Emerging Applications)
View Full-Text   |   Download PDF [5229 KB, uploaded 20 September 2016]   |  

Abstract

The importance of energy-constrained processors continues to grow especially for ultra-portable sensor-based platforms for the Internet-of-Things (IoT). Processors for these IoT applications primarily operate at near-threshold (NT) voltages and have multiple power modes. Achieving high conversion efficiency within the DC–DC converter that supplies these processors is critical since energy consumption of the DC–DC/processor system is proportional to the DC–DC converter efficiency. The DC–DC converter must maintain high efficiency over a large load range generated from the multiple power modes of the processor. This paper presents a fully integrated step-down self-oscillating switched-capacitor DC–DC converter that is capable of meeting these challenges. The area of the converter is 0.0104 mm2 and is designed in 28 nm ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI). Back-gate biasing within FD-SOI is utilized to increase the load power range of the converter. With an input of 1 V and output of 460 mV, measurements of the converter show a minimum efficiency of 75% for 79 nW to 200 µW loads. Measurements with an off-chip NT processor load show efficiency up to 86%. The converter’s large load power range and high efficiency make it an excellent fit for energy-constrained processors. View Full-Text
Keywords: switched-capacitor; DC–DC converter; near-threshold voltage; self-oscillating; ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI); fully-depleted SOI (UTBB FD-SOI); sub-threshold; low voltage regulation switched-capacitor; DC–DC converter; near-threshold voltage; self-oscillating; ultra-thin body and buried oxide fully-depleted SOI (UTBB FD-SOI); fully-depleted SOI (UTBB FD-SOI); sub-threshold; low voltage regulation
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Turnquist, M.; Hiienkari, M.; Mäkipää, J.; Koskinen, L. A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI. J. Low Power Electron. Appl. 2016, 6, 17.

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J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
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