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J. Low Power Electron. Appl. 2015, 5(2), 69-80; doi:10.3390/jlpea5020069

Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View

1
LSI/PSI—Integrated Systems Laboratory/Department of Electronic Systems Engineering, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav.3, n.158, Sao Paulo 05508-010, Brazil
2
IMEC—Interuniversity Microelectronic Centre, Kapeldreef 75, B-3001 Leuven, Belgium
3
Electrical Engineering Department, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
The original of this paper had been presented in IEEE S3S Conference 2014.
*
Author to whom correspondence should be addressed.
Academic Editors: David Bol and Steven A. Vitale
Received: 19 February 2015 / Revised: 16 April 2015 / Accepted: 21 April 2015 / Published: 29 April 2015
(This article belongs to the Special Issue Selected Papers from IEEE S3S Conference 2014)
View Full-Text   |   Download PDF [305 KB, uploaded 29 April 2015]   |  

Abstract

This work presents an analysis about the influence of the gate and source/drain underlap length (LUL) on UTBB FDSOI (UltraThin-Body-and-Buried-oxide Fully-Depleted-Silicon-On-Insulator) devices operating in conventional (VB = 0 V), dynamic threshold (DT, VB = VG), and the enhanced DT (eDT, VB = kVG) configurations, focusing on low power applications. It is shown that the underlap devices present a lower off-state current (IOFF at VG = 0 V), lower subthreshold swing (S), lower gate-induced drain leakage (GIDL), higher transconductance over drain current (gm/ID) ratio and higher intrinsic voltage gain (|AV|) due to their longer effective channel length in weak inversion and lower lateral electric field, while the eDT mode presents higher on-state current (ION) with the same IOFF, lower S, higher maximum transconductance (gmmax), lower threshold voltage (VT), higher gm/ID ratio and higher |AV| due to the dynamically reduced threshold voltage and stronger transversal electric field. View Full-Text
Keywords: dynamic threshold; UTBB; underlap; low power applications dynamic threshold; UTBB; underlap; low power applications
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Sasaki, K.R.A.; Aoulaiche, M.; Simoen, E.; Claeys, C.; Martino, J.A. Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View. J. Low Power Electron. Appl. 2015, 5, 69-80.

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J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
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