J. Low Power Electron. Appl. 2013, 3(2), 194-214; doi:10.3390/jlpea3020194
Article

Bias-Flip Technique for Frequency Tuning of Piezo-Electric Energy Harvesting Devices

1 Tianjin University, School of Electronic Information Engineering, 92 Weijin Rd, Nankai Dist., Tianjin, China 2 Texas Instruments, Inc., 12500 TI Blvd., Dallas, TX 75243, USA 3 Massachusetts Institute of Technology, EECS Dept, 77 Mass Ave, Cambridge, MA 02139, USA
* Author to whom correspondence should be addressed.
Received: 13 March 2013; in revised form: 7 May 2013 / Accepted: 24 May 2013 / Published: 18 June 2013
(This article belongs to the Special Issue Selected Papers from SubVt 2012 Conference)
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Abstract: Devices that harvest electrical energy from mechanical vibrations have the problem that the frequency of the source vibration is often not matched to the resonant frequency of the energy harvesting device. Manufacturing tolerances make it difficult to match the Energy Harvesting Device (EHD) resonant frequency to the source vibration frequency, and the source vibration frequency may vary with time. Previous work has recognized that it is possible to tune the resonant frequency of an EHD using a tunable, reactive impedance at the output of the device. The present paper develops the theory of electrical tuning, and proposes the Bias-Flip (BF) technique, to implement this tunable, reactive impedance.
Keywords: energy harvesting; bias-flip; piezo-electric

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MDPI and ACS Style

Zhao, J.; Ramadass, Y.; Lang, J.; Ma, J.; Buss, D. Bias-Flip Technique for Frequency Tuning of Piezo-Electric Energy Harvesting Devices. J. Low Power Electron. Appl. 2013, 3, 194-214.

AMA Style

Zhao J, Ramadass Y, Lang J, Ma J, Buss D. Bias-Flip Technique for Frequency Tuning of Piezo-Electric Energy Harvesting Devices. Journal of Low Power Electronics and Applications. 2013; 3(2):194-214.

Chicago/Turabian Style

Zhao, Jianying; Ramadass, Yogesh; Lang, Jeffrey; Ma, Jianguo; Buss, Dennis. 2013. "Bias-Flip Technique for Frequency Tuning of Piezo-Electric Energy Harvesting Devices." J. Low Power Electron. Appl. 3, no. 2: 194-214.

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