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Appl. Sci. 2012, 2(1), 233-244; doi:10.3390/app2010233
Article

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs

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Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, TX 78758, USA
* Author to whom correspondence should be addressed.
Received: 30 January 2012 / Revised: 20 February 2012 / Accepted: 10 March 2012 / Published: 19 March 2012
(This article belongs to the Special Issue Organo-Fluorine Chemical Science)
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Abstract

This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment. The optimum condition of CF4/O2 plasma treatment has been systematically studied and found to be 30 W for 3–5 min. Approximately 5× reduction in interface trap density from 2.8 × 1012 to 4.9 × 1011 cm−2eV−1 has been demonstrated with fluorine (F) incorporation. Subthreshold swing has been improved from 127 to 109 mV/dec. Effective channel mobility has been enhanced from 826 to 1,144 cm2/Vs.
Keywords: InGaAs; HfO2; fluorine plasma treatment; high-k dielectrics InGaAs; HfO2; fluorine plasma treatment; high-k dielectrics
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Chen, Y.-T.; Wang, Y.; Xue, F.; Zhou, F.; Lee, J.C. Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs. Appl. Sci. 2012, 2, 233-244.

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