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Appl. Sci. 2012, 2(1), 233-244; doi:10.3390/app2010233
Article

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs

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Received: 30 January 2012; in revised form: 20 February 2012 / Accepted: 10 March 2012 / Published: 19 March 2012
(This article belongs to the Special Issue Organo-Fluorine Chemical Science)
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Abstract: This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment. The optimum condition of CF4/O2 plasma treatment has been systematically studied and found to be 30 W for 3–5 min. Approximately 5× reduction in interface trap density from 2.8 × 1012 to 4.9 × 1011 cm−2eV−1 has been demonstrated with fluorine (F) incorporation. Subthreshold swing has been improved from 127 to 109 mV/dec. Effective channel mobility has been enhanced from 826 to 1,144 cm2/Vs.
Keywords: InGaAs; HfO2; fluorine plasma treatment; high-k dielectrics InGaAs; HfO2; fluorine plasma treatment; high-k dielectrics
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Chen, Y.-T.; Wang, Y.; Xue, F.; Zhou, F.; Lee, J.C. Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs. Appl. Sci. 2012, 2, 233-244.

AMA Style

Chen Y-T, Wang Y, Xue F, Zhou F, Lee JC. Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs. Applied Sciences. 2012; 2(1):233-244.

Chicago/Turabian Style

Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Zhou, Fei; Lee, Jack C. 2012. "Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs." Appl. Sci. 2, no. 1: 233-244.


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