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Appl. Sci. 2012, 2(1), 233-244; doi:10.3390/app2010233

Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs

Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, TX 78758, USA
Author to whom correspondence should be addressed.
Received: 30 January 2012 / Revised: 20 February 2012 / Accepted: 10 March 2012 / Published: 19 March 2012
(This article belongs to the Special Issue Organo-Fluorine Chemical Science)
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This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment. The optimum condition of CF4/O2 plasma treatment has been systematically studied and found to be 30 W for 3–5 min. Approximately 5× reduction in interface trap density from 2.8 × 1012 to 4.9 × 1011 cm−2eV−1 has been demonstrated with fluorine (F) incorporation. Subthreshold swing has been improved from 127 to 109 mV/dec. Effective channel mobility has been enhanced from 826 to 1,144 cm2/Vs.
Keywords: InGaAs; HfO2; fluorine plasma treatment; high-k dielectrics InGaAs; HfO2; fluorine plasma treatment; high-k dielectrics

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Chen, Y.-T.; Wang, Y.; Xue, F.; Zhou, F.; Lee, J.C. Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs. Appl. Sci. 2012, 2, 233-244.

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