Microplasma Field Effect Transistors
AbstractMicro plasma devices (MPD) with power gains are of interest in applications involving operations in the presence of ionizing radiations, in propulsion, in control, amplification of high power electromagnetic waves, and in metamaterials for energy management. Here, we review and discuss MPDs with an emphasis on new architectures that have evolved during the past seven years. Devices with programmable impact ionization rates and programmable boundaries are developed to control the plasma ignition voltage and current to achieve power gain. Plasma devices with 1–10 μm gaps are shown to operate in the sub-Paschen regime in atmospheric pressures where ion-assisted field emission results in a breakdown voltage that linearly depends on the gap distance in contrast to the exponential dependence dictated by the Paschen curve. Small gap devices offer higher operation frequencies at low operation voltages with applications in metamaterial skins for energy management and in harsh environment inside nuclear reactors and in space. In addition to analog plasma devices, logic gates, digital circuits, and distributed amplifiers are also discussed. View Full-Text
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Tabib-Azar, M.; Pai, P. Microplasma Field Effect Transistors. Micromachines 2017, 8, 117.
Tabib-Azar M, Pai P. Microplasma Field Effect Transistors. Micromachines. 2017; 8(4):117.Chicago/Turabian Style
Tabib-Azar, Massood; Pai, Pradeep. 2017. "Microplasma Field Effect Transistors." Micromachines 8, no. 4: 117.
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