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Micromachines 2016, 7(12), 232; doi:10.3390/mi7120232

Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

1
Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
2
School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China
*
Author to whom correspondence should be addressed.
Academic Editor: Massood Tabib-Azar
Received: 14 October 2016 / Revised: 24 November 2016 / Accepted: 29 November 2016 / Published: 14 December 2016
(This article belongs to the Special Issue Microplasma Devices)
View Full-Text   |   Download PDF [7163 KB, uploaded 14 December 2016]   |  

Abstract

The prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD), as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiNx) is often used as a dielectric barrier layer in DBD due to its excellent chemical inertness and high electrical permittivity. However, during fabrication of the MDBD devices with multilayer films for maskless nano etching, the residual stress-induced deformation may bring cracks or wrinkles of the devices after depositing SiNx by plasma enhanced chemical vapor deposition (PECVD). Considering that the residual stress of SiNx can be tailored from compressive stress to tensile stress under different PECVD deposition parameters, in order to minimize the stress-induced deformation and avoid cracks or wrinkles of the MDBD device, we experimentally measured stress in each thin film of a MDBD device, then used numerical simulation to analyze and obtain the minimum deformation of multilayer films when the intrinsic stress of SiNx is −200 MPa compressive stress. The stress of SiNx can be tailored to the desired value by tuning the deposition parameters of the SiNx film, such as the silane (SiH4)–ammonia (NH3) flow ratio, radio frequency (RF) power, chamber pressure, and deposition temperature. Finally, we used the optimum PECVD process parameters to successfully fabricate a MDBD device with good quality. View Full-Text
Keywords: silicon nitride; plasma enhanced chemical vapor deposition (PECVD); multilayer thin films; residual stress; micro dielectric barrier discharge; simulation silicon nitride; plasma enhanced chemical vapor deposition (PECVD); multilayer thin films; residual stress; micro dielectric barrier discharge; simulation
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Li, Q.; Liu, J.; Dai, Y.; Xiang, W.; Zhang, M.; Wang, H.; Wen, L. Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching. Micromachines 2016, 7, 232.

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