Next Article in Journal
Nano-Workbench: A Combined Hollow AFM Cantilever and Robotic Manipulator
Previous Article in Journal
Optimizing Polymer Lab-on-Chip Platforms for Ultrasonic Manipulation: Influence of the Substrate
Previous Article in Special Issue
A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology
Article Menu

Export Article

Open AccessArticle
Micromachines 2015, 6(5), 592-599; doi:10.3390/mi6050592

Design of 340 GHz 2× and 4× Sub-Harmonic Mixers Using Schottky Barrier Diodes in Silicon-Based Technology

1
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
2
Semiconductor Device Research Laboratory, Terahertz Research Centre, CAEP, Chengdu 611731, China
*
Author to whom correspondence should be addressed.
Academic Editor: Geok Ing Ng
Received: 1 March 2015 / Revised: 2 May 2015 / Accepted: 7 May 2015 / Published: 12 May 2015
(This article belongs to the Special Issue Advances in MMICs)
View Full-Text   |   Download PDF [1335 KB, uploaded 12 May 2015]   |  

Abstract

This paper presents the design of terahertz 2× and 4× sub-harmonic down-mixers using Schottky Barrier Diodes fabricated in standard 0.13 μm SiGe BiCMOS technology. The 340 GHz sub-harmonic mixers (SHMs) are designed based on anti-parallel-diode-pairs (APDPs). With the 2nd and 4th harmonic, local oscillator (LO) frequencies of 170 GHz and 85 GHz are used to pump the two 340 GHz SHMs. With LO power of 7 dBm, the 2× SHM exhibits a conversion loss of 34.5–37 dB in the lower band (320–340 GHz) and 35.5–41 dB in the upper band (340–360 GHz); with LO power of 9 dBm, the 4× SHM exhibits a conversion loss of 39–43 dB in the lower band (320–340 GHz) and 40–48 dB in the upper band (340–360 GHz). The measured input 1-dB conversion gain compression point for the 2× and 4× SHMs are −8 dBm and −10 dBm at 325 GHz, respectively. The simulated LO-IF (intermediate frequency) isolation of the 2× SHM is 21.5 dB, and the measured LO-IF isolation of the 4× SHM is 32 dB. The chip areas of the 2× and 4× SHMs are 330 μm × 580 μm and 550 μm × 610 μm, respectively, including the testing pads. View Full-Text
Keywords: terahertz mixer; APDP; SHM; Schottky barrier diode terahertz mixer; APDP; SHM; Schottky barrier diode
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Liu, C.; Li, Q.; Li, Y.; Li, X.; Liu, H.; Xiong, Y.-Z. Design of 340 GHz 2× and 4× Sub-Harmonic Mixers Using Schottky Barrier Diodes in Silicon-Based Technology. Micromachines 2015, 6, 592-599.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top