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Micromachines 2015, 6(3), 390-395; doi:10.3390/mi6030390

A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology

1
Ministerial Key Laboratory of JGMT, Nanjing University of Science and Technology, Nanjing 210094, China
2
Semiconductor Device Research Laboratory, Terahertz Research Centre, CAEP, Chengdu 611731, China
*
Author to whom correspondence should be addressed.
Academic Editor: Geok Ing Ng
Received: 2 February 2015 / Revised: 23 February 2015 / Accepted: 24 February 2015 / Published: 23 March 2015
(This article belongs to the Special Issue Advances in MMICs)
View Full-Text   |   Download PDF [351 KB, uploaded 23 March 2015]   |  

Abstract

This paper presents a reflection-type phase shifter (RTPS) at W-band in a 0.13 µm complementary metal oxide semiconductor (CMOS) process. The RTPS is composed of a 90° hybrid coupler and two identical reflection loads. Lumped-distributed element transmission line is introduced in the 90° hybrid coupler to reduce the chip size. Series inductor-capacitor (LC) resonators are used as the reflective loads and parallel inductors are deployed to reduce insertion loss variation. By cascading two-stage RTPS, 90° phase shifting range and 10.5 dB insertion loss with 1 dB variations from 80 GHz to 90 GHz are achieved. An impressive 0.1 dB variation is obtained at 86 GHz. View Full-Text
Keywords: W-band; reflection-type phase shifter; insertion loss variation; series LC resonators; lumped and distributed elements; CMOS technology W-band; reflection-type phase shifter; insertion loss variation; series LC resonators; lumped and distributed elements; CMOS technology
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Deng, X.-D.; Li, Y.; Wu, W.; Xiong, Y.-Z. A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology. Micromachines 2015, 6, 390-395.

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