Sensors 2009, 9(3), 1330-1338; doi:10.3390/s90301330

An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer

Institute of Electronics, Chinese Academy of Sciences, State Key Laboratories of Transducer Technology, Beijing, P.R. China
* Author to whom correspondence should be addressed.
Received: 26 January 2009; in revised form: 16 February 2009 / Accepted: 23 February 2009 / Published: 26 February 2009
PDF Full-text Download PDF Full-Text [228 KB, uploaded 26 February 2009 14:41 CET]
Abstract: A resonant microbeam accelerometer of a novel highly symmetric structure based on MEMS bulk-silicon technology is proposed and some numerical modeling results for this scheme are presented. The accelerometer consists of two proof masses, four supporting hinges, two anchors, and a vibrating triple beam, which is clamped at both ends to the two proof masses. LPCVD silicon rich nitride is chosen as the resonant triple beam material, and parameter optimization of the triple-beam structure has been performed. The triple beam is excited and sensed electromagnetically by film electrodes located on the upper surface of the beam. Both simulation and experimental results show that the novel structure increases the scale factor of the resonant accelerometer, and ameliorates other performance issues such as cross axis sensitivity of insensitive input acceleration, etc.
Keywords: Resonant accelerometer; Modeling; Silicon rich nitride; Triple beam; Electromagnetic excitation

Article Statistics

Load and display the download statistics.

Citations to this Article

Cite This Article

MDPI and ACS Style

Chen, D.; Wu, Z.; Liu, L.; Shi, X.; Wang, J. An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer. Sensors 2009, 9, 1330-1338.

AMA Style

Chen D, Wu Z, Liu L, Shi X, Wang J. An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer. Sensors. 2009; 9(3):1330-1338.

Chicago/Turabian Style

Chen, Deyong; Wu, Zhengwei; Liu, Lei; Shi, Xiaojing; Wang, Junbo. 2009. "An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer." Sensors 9, no. 3: 1330-1338.

Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert