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Sensors 2009, 9(3), 1330-1338; doi:10.3390/s90301330
Article

An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer

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Received: 26 January 2009; in revised form: 16 February 2009 / Accepted: 23 February 2009 / Published: 26 February 2009
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Abstract: A resonant microbeam accelerometer of a novel highly symmetric structure based on MEMS bulk-silicon technology is proposed and some numerical modeling results for this scheme are presented. The accelerometer consists of two proof masses, four supporting hinges, two anchors, and a vibrating triple beam, which is clamped at both ends to the two proof masses. LPCVD silicon rich nitride is chosen as the resonant triple beam material, and parameter optimization of the triple-beam structure has been performed. The triple beam is excited and sensed electromagnetically by film electrodes located on the upper surface of the beam. Both simulation and experimental results show that the novel structure increases the scale factor of the resonant accelerometer, and ameliorates other performance issues such as cross axis sensitivity of insensitive input acceleration, etc.
Keywords: Resonant accelerometer; Modeling; Silicon rich nitride; Triple beam; Electromagnetic excitation Resonant accelerometer; Modeling; Silicon rich nitride; Triple beam; Electromagnetic excitation
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Chen, D.; Wu, Z.; Liu, L.; Shi, X.; Wang, J. An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer. Sensors 2009, 9, 1330-1338.

AMA Style

Chen D, Wu Z, Liu L, Shi X, Wang J. An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer. Sensors. 2009; 9(3):1330-1338.

Chicago/Turabian Style

Chen, Deyong; Wu, Zhengwei; Liu, Lei; Shi, Xiaojing; Wang, Junbo. 2009. "An Electromagnetically Excited Silicon Nitride Beam Resonant Accelerometer." Sensors 9, no. 3: 1330-1338.


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