Sensors 2009, 9(11), 8748-8760; doi:10.3390/s91108748
Article

Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process

1 Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402 Taiwan 2 Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, Tamsui, 251 Taiwan 3 Corporate R&D Headquarters, Canon Inc., Tokyo 146-8501, Japan
* Author to whom correspondence should be addressed.
Received: 30 July 2009; in revised form: 19 October 2009 / Accepted: 26 October 2009 / Published: 30 October 2009
PDF Full-text Download PDF Full-Text [973 KB, uploaded 30 October 2009 11:21 CET]
Abstract: In this study, we fabricated a wireless micro FET (field effect transistor) pressure sensor based on the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The wireless micro pressure sensor is composed of a FET pressure sensor, an oscillator, an amplifier and an antenna. The oscillator is adopted to generate an ac signal, and the amplifier is used to amplify the sensing signal of the pressure sensor. The antenna is utilized to transmit the output voltage of the pressure sensor to a receiver. The pressure sensor is constructed by 16 sensing cells in parallel. Each sensing cell contains an MOS (metal oxide semiconductor) and a suspended membrane, which the gate of the MOS is the suspended membrane. The postprocess employs etchants to etch the sacrificial layers in the pressure sensor for releasing the suspended membranes, and a LPCVD (low pressure chemical vapor deposition) parylene is adopted to seal the etch holes in the pressure. Experimental results show that the pressure sensor has a sensitivity of 0.08 mV/kPa in the pressure range of 0–500 kPa and a wireless transmission distance of 10 cm.
Keywords: wireless micro pressure sensor; CMOS-MEMS; oscillators

Article Statistics

Load and display the download statistics.

Citations to this Article

Cite This Article

MDPI and ACS Style

Dai, C.-L.; Lu, P.-W.; Wu, C.-C.; Chang, C. Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process. Sensors 2009, 9, 8748-8760.

AMA Style

Dai C-L, Lu P-W, Wu C-C, Chang C. Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process. Sensors. 2009; 9(11):8748-8760.

Chicago/Turabian Style

Dai, Ching-Liang; Lu, Po-Wei; Wu, Chyan-Chyi; Chang, Chienliu. 2009. "Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process." Sensors 9, no. 11: 8748-8760.

Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert