Sensors 2013, 13(1), 1085-1101; doi:10.3390/s130101085
Monolithic Composite “Pressure + Acceleration + Temperature + Infrared” Sensor Using a Versatile Single-Sided “SiN/Poly-Si/Al” Process-Module
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
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Received: 26 November 2012 / Revised: 27 December 2012 / Accepted: 5 January 2013 / Published: 16 January 2013
(This article belongs to the Section Physical Sensors)
Abstract
We report a newly developed design/fabrication module with low-cost single-sided “low-stress-silicon-nitride (LS-SiN)/polysilicon (poly-Si)/Al” process for monolithic integration of composite sensors for sensing-network-node applications. A front-side surface-/bulk-micromachining process on a conventional Si-substrate is developed, featuring a multifunctional SiN/poly-Si/Al layer design for diverse sensing functions. The first “pressure + acceleration + temperature + infrared” (PATIR) composite sensor with the chip size of 2.5 mm × 2.5 mm is demonstrated. Systematic theoretical design and analysis methods are developed. The diverse sensing components include a piezoresistive absolute-pressure sensor (up to 700 kPa, with a sensitivity of 49 mV/MPa under 3.3 V supplied voltage), a piezoresistive accelerometer (±10 g, with a sensitivity of 66 μV/g under 3.3 V and a −3 dB bandwidth of 780 Hz), a thermoelectric infrared detector (with a responsivity of 45 V/W and detectivity of 3.6 × 107 cm·Hz1/2/W) and a thermistor (−25–120 °C). This design/fabrication module concept enables a low-cost monolithically-integrated “multifunctional-library” technique. It can be utilized as a customizable tool for versatile application-specific requirements, which is very useful for small-size, low-cost, large-scale sensing-network node developments. View Full-TextKeywords:
composite sensor; sensing networks; MEMS; single-sided; process
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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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