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Sensors 2012, 12(5), 5608-5622; doi:10.3390/s120505608

Thermal and Optical Activation Mechanisms of Nanospring-Based Chemiresistors

1
Department of Physics and Astronomy, Western Kentucky University, Bowling Green, KY 42101, USA
2
Department of Physics, E&P Bldg, University of Idaho, Moscow, ID 83844, USA
3
GoNano Technologies, 112 Sweet Ave., Moscow, ID 83843, USA
4
ElectroOptics Research Institute and Nanotechnology Center, University of Louisville, Louisville, KY 40292, USA
*
Author to whom correspondence should be addressed.
Received: 13 March 2012 / Revised: 27 March 2012 / Accepted: 12 April 2012 / Published: 2 May 2012
(This article belongs to the Special Issue Sensing at the Nano-Scale: Chemical and Bio-Sensing)
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Abstract

Chemiresistors (conductometric sensor) were fabricated on the basis of novel nanomaterials—silica nanosprings ALD coated with ZnO. The effects of high temperature and UV illumination on the electronic and gas sensing properties of chemiresistors are reported. For the thermally activated chemiresistors, a discrimination mechanism was developed and an integrated sensor-array for simultaneous real-time resistance scans was built. The integrated sensor response was tested using linear discriminant analysis (LDA). The distinguished electronic signatures of various chemical vapors were obtained at ppm level. It was found that the recovery rate at high temperature drastically increases upon UV illumination. The feasibility study of the activation method by UV illumination at room temperature was conducted. View Full-Text
Keywords: nanosprings; sensor; electronic nose nanosprings; sensor; electronic nose
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Dobrokhotov, V.; Oakes, L.; Sowell, D.; Larin, A.; Hall, J.; Barzilov, A.; Kengne, A.; Bakharev, P.; Corti, G.; Cantrell, T.; Prakash, T.; Williams, J.; Bergman, L.; Huso, J.; McIlroy, D. Thermal and Optical Activation Mechanisms of Nanospring-Based Chemiresistors. Sensors 2012, 12, 5608-5622.

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