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Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures
Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
* Author to whom correspondence should be addressed.
Received: 8 March 2012; in revised form: 1 April 2012 / Accepted: 25 April 2012 / Published: 30 April 2012
Abstract: Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors.
Keywords: hydrogen gas sensor; semiconductor oxides; nanostructure; thin films; one-dimensional nanostructures
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Cite This Article
MDPI and ACS Style
Gu, H.; Wang, Z.; Hu, Y. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures. Sensors 2012, 12, 5517-5550.
Gu H, Wang Z, Hu Y. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures. Sensors. 2012; 12(5):5517-5550.
Gu, Haoshuang; Wang, Zhao; Hu, Yongming. 2012. "Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures." Sensors 12, no. 5: 5517-5550.