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Sensors 2012, 12(5), 5517-5550; doi:10.3390/s120505517

Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

* ,
Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
* Author to whom correspondence should be addressed.
Received: 8 March 2012 / Revised: 1 April 2012 / Accepted: 25 April 2012 / Published: 30 April 2012
(This article belongs to the Special Issue Sensing at the Nano-Scale: Chemical and Bio-Sensing)
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Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors.
Keywords: hydrogen gas sensor; semiconductor oxides; nanostructure; thin films; one-dimensional nanostructures hydrogen gas sensor; semiconductor oxides; nanostructure; thin films; one-dimensional nanostructures
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Gu, H.; Wang, Z.; Hu, Y. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures. Sensors 2012, 12, 5517-5550.

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