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Sensors 2010, 10(7), 6488-6496; doi:10.3390/s100706488
Article

Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

1,* , 1
, 1
, 2
, 2
 and 1,*
1 Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA 93106-5090, USA 2 Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-4330, USA
* Authors to whom correspondence should be addressed.
Received: 22 April 2010 / Revised: 11 May 2010 / Accepted: 30 June 2010 / Published: 1 July 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
View Full-Text   |   Download PDF [260 KB, 21 June 2014; original version 21 June 2014]   |   Browse Figures

Abstract

Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors.
Keywords: semiconducting polymer; photodetectors; blocking layers; detectivity semiconducting polymer; photodetectors; blocking layers; detectivity
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Gong, X.; Tong, M.-H.; Park, S.H.; Liu, M.; Jen, A.; Heeger, A.J. Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared. Sensors 2010, 10, 6488-6496.

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