Sensors 2010, 10(2), 1012-1020; doi:10.3390/s100201012
Article

Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Seyedeh Maryam Banihashemian 1 email, Hassan Hajghassem 2,* email, Alireza Erfanian 3 email, Majidreza Aliahmadi 4 email, Mansor Mohtashamifar 4 email and Seyed Mohamadhosein Mosakazemi 5 email
1 Department of Physics, Islamic Azad University, Qom Branch, Qom, Iran 2 Electrical Engineering Department, Shahid Beheshti University, Tehran, Iran 3 Electrical Engineering Department, K.N. Toosi University, Tehran, Iran 4 Electronic Research Center, Tehran, Iran 5 Qom Payame Noor University, Iran
* Author to whom correspondence should be addressed.
Received: 19 November 2009; in revised form: 29 December 2009 / Accepted: 18 January 2010 / Published: 27 January 2010
(This article belongs to the Special Issue ISFET Sensors)
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Abstract: Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM). Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR) and the number of peaks in I-V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is observed that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6.
Keywords: nanoporous Si; platinum silicide; quantum tunneling effect; negative differential resistance

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MDPI and ACS Style

Banihashemian, S.M.; Hajghassem, H.; Erfanian, A.; Aliahmadi, M.; Mohtashamifar, M.; Mosakazemi, S.M. Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon. Sensors 2010, 10, 1012-1020.

AMA Style

Banihashemian SM, Hajghassem H, Erfanian A, Aliahmadi M, Mohtashamifar M, Mosakazemi SM. Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon. Sensors. 2010; 10(2):1012-1020.

Chicago/Turabian Style

Banihashemian, Seyedeh Maryam; Hajghassem, Hassan; Erfanian, Alireza; Aliahmadi, Majidreza; Mohtashamifar, Mansor; Mosakazemi, Seyed Mohamadhosein. 2010. "Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon." Sensors 10, no. 2: 1012-1020.

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