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Sensors 2010, 10(2), 1012-1020; doi:10.3390/s100201012

Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

1
Department of Physics, Islamic Azad University, Qom Branch, Qom, Iran
2
Electrical Engineering Department, Shahid Beheshti University, Tehran, Iran
3
Electrical Engineering Department, K.N. Toosi University, Tehran, Iran
4
Electronic Research Center, Tehran, Iran
5
Qom Payame Noor University, Iran
*
Author to whom correspondence should be addressed.
Received: 19 November 2009 / Revised: 29 December 2009 / Accepted: 18 January 2010 / Published: 27 January 2010
(This article belongs to the Special Issue ISFET Sensors)
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Abstract

Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM). Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR) and the number of peaks in I-V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is observed that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6. View Full-Text
Keywords: nanoporous Si; platinum silicide; quantum tunneling effect; negative differential resistance nanoporous Si; platinum silicide; quantum tunneling effect; negative differential resistance
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Banihashemian, S.M.; Hajghassem, H.; Erfanian, A.; Aliahmadi, M.; Mohtashamifar, M.; Mosakazemi, S.M. Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon. Sensors 2010, 10, 1012-1020.

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