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Sensors 2010, 10(1), 61-83; doi:10.3390/s100100061
Review
ISFET Based Microsensors for Environmental Monitoring
Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Barcelona, Spain
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Present adress: Observatoire Océanologique, Laboratoire Arago, Avenue du Fontaulé, BP 44, 66651 Banyuls Sur Mer, France
* Author to whom correspondence should be addressed.
Received: 6 November 2009; in revised form: 3 December 2009 / Accepted: 4 December 2009 / Published: 24 December 2009
(This article belongs to the Special Issue ISFET Sensors)
Abstract: The use of microsensors for in-field monitoring of environmental parameters is gaining interest due to their advantages over conventional sensors. Among them microsensors based on semiconductor technology offer additional advantages such as small size, robustness, low output impedance and rapid response. Besides, the technology used allows integration of circuitry and multiple sensors in the same substrate and accordingly they can be implemented in compact probes for particular applications e.g., in situ monitoring and/or on-line measurements. In the field of microsensors for environmental applications, Ion Selective Field Effect Transistors (ISFETs) have a special interest. They are particularly helpful for measuring pH and other ions in small volumes and they can be integrated in compact flow cells for continuous measurements. In this paper the technologies used to fabricate ISFETs and a review of the role of ISFETs in the environmental field are presented.
Keywords: ISFETs; microsensors; environmental monitoring
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MDPI and ACS Style
Jimenez-Jorquera, C.; Orozco, J.; Baldi, A. ISFET Based Microsensors for Environmental Monitoring. Sensors 2010, 10, 61-83.
AMA StyleJimenez-Jorquera C, Orozco J, Baldi A. ISFET Based Microsensors for Environmental Monitoring. Sensors. 2010; 10(1):61-83.
Chicago/Turabian StyleJimenez-Jorquera, Cecilia; Orozco, Jahir; Baldi, Antoni. 2010. "ISFET Based Microsensors for Environmental Monitoring." Sensors 10, no. 1: 61-83.
