Special Issue "Epitaxial Materials"

Guest Editor
Dr. Giorgio Biasiol
AMD - Advanced Material and Devices group, TASC-INFM National Laboratory, S.S. 14, Km 163.5 in Area Science Park, 34149 Basovizza (Trieste), Italy
Website: http://www.tasc.infm.it/research/amd/staff/biasiol.htm
E-Mail: biasiol@iom.cnr.it
Phone: +39 040 3756439
Fax: +39 040 226767
Interests: compound semiconductor thin films and nanostructures; crystal growth and epitaxy; kinetics of epitaxial growth; photoemission spectroscopy and microscopy; coherent transport

Dear Colleagues,

Epitaxial techniques were developed a few decades ago as convenient methods to synthesize monocrystalline films on monocrystalline substrates, with unpaired control over quality, purity, thickness and interface sharpness. Depending on the materials and the layer structure to be grown, epitaxy can be performed from the vapor, liquid or solid phases, or in the form of molecular beams in ultra-high vacuum. The materials originally grown were elemental and compound semiconductors, and these materials represent still today the most prominent application of epitaxial techniques. However, a wide range of novel epitaxial materials is nowadays synthesized, including oxides, magnetic materials, superconductors, metals, and organics. Materials grown through such techniques have become common constituents of devices we use in everyday life, in fields ranging from nano and optoelectronics, to photonics, ICT, energy production, sensing, biological and environmental applications. Besides, special modifications of epitaxial techniques allow the synthesis of low-dimensional structures, such as quantum dots, nanowires, carbon nanotubes and epitaxial graphene. In this special issue we address recent progress and new directions in the synthesis of traditional and novel materials, including low-dimensional structures, by means of the above mentioned epitaxial techniques.

Dr. Giorgio Biasiol
Guest Editor

Submission

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• epitaxial materials
• epitaxial nanostructures
• molecular beam epitaxy (MBE)
• liquid phase epitaxy (LPE)
• vapor phase epitaxy (VPE)
• metalorganic vapor phase epitaxy (MOVPE, MOCVD)
• solid phase epitaxy (SPE)
• semiconductors
• magnetic materials
• oxides
• superconductors
• organic semiconductors

Title: Selective Epitaxy of SiGe Layers Using RPCVD
Author: Henry Radamson
Affiliation: School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg, 22-26, Electrum 229, 16640 Kista, Sweden; E-Mail: rad@kth.se
Abstract: This article will review the selective epitaxy growth (SEG) of intrinsic and B-doped SiGe layers in recessed or flat exposed Si surface in patterned substrate. The advantages and disadvantages of such epitaxy mode for different device applications specially for MOSFETs are discussed. The integration issues of the growth including facet formation, epitaxy quality, selectivity, dopant incorporation and pattern dependency (or loading effect) are presented. The last issue is more critical when the growth rate, layer composition and dopant concentration over the patterned substrates depend on wafer architecture and mask layout. By wafer architecture we mean the isolator material which covers the wafer (oxide, nitride) and its thickness meanwhile the mask layout is the form, size and area of the openings. The pattern dependency may appear for a wafer-to-wafer case when the mask design or wafer architecture is varied (global effect) or on the same wafer or chip when the mask layout is non-uniform (local effect). This article will focus on the origin of pattern dependency of SEG and reviews also the solutions for this problem.