Materials 2011, 4(12), 2092-2107; doi:10.3390/ma4122092

Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

ECTM-DIMES, Delft University of Technology, Feldmannweg 17, Delft 2628CT, The Netherlands
* Author to whom correspondence should be addressed.
Received: 6 October 2011; in revised form: 14 November 2011 / Accepted: 24 November 2011 / Published: 6 December 2011
(This article belongs to the Special Issue Epitaxial Materials)
PDF Full-text Download PDF Full-Text [1133 KB, uploaded 6 December 2011 10:44 CET]
Abstract: An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 1016 to 1017 cm−3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm2 anode area.
Keywords: silicon epitaxy; high-resistivity epi-layers; arsenic auto-doping; arsenic segregation; charged-particle detection; diode capacitance; photodiodes

Article Statistics

Load and display the download statistics.

Citations to this Article

Cite This Article

MDPI and ACS Style

Sakic, A.; Scholtes, T.L.M.; Boer, W.; Golshani, N.; Derakhshandeh, J.; Nanver, L.K. Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes. Materials 2011, 4, 2092-2107.

AMA Style

Sakic A, Scholtes TLM, Boer W, Golshani N, Derakhshandeh J, Nanver LK. Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes. Materials. 2011; 4(12):2092-2107.

Chicago/Turabian Style

Sakic, Agata; Scholtes, Tom L. M.; Boer, Wiebe de; Golshani, Negin; Derakhshandeh, Jaber; Nanver, Lis K. 2011. "Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes." Materials 4, no. 12: 2092-2107.

Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert