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InN Nanowires: Growth and Optoelectronic Properties
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Received: 10 September 2012; in revised form: 12 October 2012 / Accepted: 23 October 2012 / Published: 31 October 2012
Abstract: An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
Keywords: self-assembly semiconducting; molecular beam epitaxy (MBE); nanoscale; electrical properties; III-V; optical properties; optoelectronic; photoconductivity
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Cite This Article
MDPI and ACS Style
Calarco, R. InN Nanowires: Growth and Optoelectronic Properties. Materials 2012, 5, 2137-2150.
Calarco R. InN Nanowires: Growth and Optoelectronic Properties. Materials. 2012; 5(11):2137-2150.
Calarco, Raffaella. 2012. "InN Nanowires: Growth and Optoelectronic Properties." Materials 5, no. 11: 2137-2150.