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Materials 2012, 5(11), 2137-2150; doi:10.3390/ma5112137
Review

InN Nanowires: Growth and Optoelectronic Properties

Received: 10 September 2012; in revised form: 12 October 2012 / Accepted: 23 October 2012 / Published: 31 October 2012
(This article belongs to the Special Issue Epitaxial Materials)
Download PDF [612 KB, uploaded 31 October 2012]
Abstract: An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
Keywords: self-assembly semiconducting; molecular beam epitaxy (MBE); nanoscale; electrical properties; III-V; optical properties; optoelectronic; photoconductivity self-assembly semiconducting; molecular beam epitaxy (MBE); nanoscale; electrical properties; III-V; optical properties; optoelectronic; photoconductivity
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Calarco, R. InN Nanowires: Growth and Optoelectronic Properties. Materials 2012, 5, 2137-2150.

AMA Style

Calarco R. InN Nanowires: Growth and Optoelectronic Properties. Materials. 2012; 5(11):2137-2150.

Chicago/Turabian Style

Calarco, Raffaella. 2012. "InN Nanowires: Growth and Optoelectronic Properties." Materials 5, no. 11: 2137-2150.


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