Next Article in Journal
Creep Behavior of a Sn-Ag-Bi Pb-Free Solder
Previous Article in Journal
Potential Applications of Zeolite Membranes in Reaction Coupling Separation Processes
Previous Article in Special Issue
Deposition of Metal-Organic Frameworks by Liquid-Phase Epitaxy: The Influence of Substrate Functional Group Density on Film Orientation
Materials 2012, 5(11), 2137-2150; doi:10.3390/ma5112137
Review

InN Nanowires: Growth and Optoelectronic Properties

Received: 10 September 2012 / Revised: 12 October 2012 / Accepted: 23 October 2012 / Published: 31 October 2012
(This article belongs to the Special Issue Epitaxial Materials)
Download PDF [612 KB, uploaded 31 October 2012]

Abstract

An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
Keywords: self-assembly semiconducting; molecular beam epitaxy (MBE); nanoscale; electrical properties; III-V; optical properties; optoelectronic; photoconductivity self-assembly semiconducting; molecular beam epitaxy (MBE); nanoscale; electrical properties; III-V; optical properties; optoelectronic; photoconductivity
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Share & Cite This Article

Further Mendeley | CiteULike
Export to BibTeX |
EndNote
MDPI and ACS Style

Calarco, R. InN Nanowires: Growth and Optoelectronic Properties. Materials 2012, 5, 2137-2150.

View more citation formats

Related Articles

Article Metrics

For more information on the journal, click here

Comments

Cited By

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert