Materials 2012, 5(11), 2137-2150; doi:10.3390/ma5112137
Review

InN Nanowires: Growth and Optoelectronic Properties

Paul-Drude-Institut f√ľr Festk√∂rperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Received: 10 September 2012; in revised form: 12 October 2012 / Accepted: 23 October 2012 / Published: 31 October 2012
(This article belongs to the Special Issue Epitaxial Materials)
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Abstract: An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
Keywords: self-assembly semiconducting; molecular beam epitaxy (MBE); nanoscale; electrical properties; III-V; optical properties; optoelectronic; photoconductivity

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MDPI and ACS Style

Calarco, R. InN Nanowires: Growth and Optoelectronic Properties. Materials 2012, 5, 2137-2150.

AMA Style

Calarco R. InN Nanowires: Growth and Optoelectronic Properties. Materials. 2012; 5(11):2137-2150.

Chicago/Turabian Style

Calarco, Raffaella. 2012. "InN Nanowires: Growth and Optoelectronic Properties." Materials 5, no. 11: 2137-2150.

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