InN Nanowires: Growth and Optoelectronic Properties
AbstractAn overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
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Calarco, R. InN Nanowires: Growth and Optoelectronic Properties. Materials 2012, 5, 2137-2150.
Calarco R. InN Nanowires: Growth and Optoelectronic Properties. Materials. 2012; 5(11):2137-2150.Chicago/Turabian Style
Calarco, Raffaella. 2012. "InN Nanowires: Growth and Optoelectronic Properties." Materials 5, no. 11: 2137-2150.