Special Issue "Low Power Embedded Memories"

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A special issue of Journal of Low Power Electronics and Applications (ISSN 2079-9268).

Deadline for manuscript submissions: closed (31 May 2012)

Special Issue Editor

Guest Editor
Dr. Benton H. Calhoun
University of Virginia, Charles L. Brown Department of Electrical and Computer Engineering, 351 McCormick Road, P.O. Box 400743, Charlottesville, VA 22904-4743, USA
Website: http://people.virginia.edu/~bhc2b/about.php
E-Mail: bcalhoun@virginia.edu
Phone: +1 434 243-2076
Fax: +1 434 924-8818
Interests: low power digital circuit design; sub-threshold digital circuits; SRAM design for end-of-the-roadmap silicon; variation tolerant circuit design methodologies; low energy electronics for medical applications

Special Issue Information

Dear Colleagues,

This Special Issue will focus on circuit techniques for low power embedded memories. Nearly all embedded applications require on-chip memory, but the requirements for these embedded memories vary significantly across applications. For many embedded designs, reducing power is a key design concern. A variety of circuit approaches have emerged to meet low power needs for memory blocks.Topics of interest include, but are not limited to:

  • reducing Vmin for low power memory
  • circuits and architectures for embedded DRAM
  • alternative bit cells for low power SRAM
  • sub-threshold memory arrays
  • low power non volatile memory technologies and circuits
  • circuit assist features for low power
  • charge recycling in RAMs
  • low power periphery (sense amplifiers, decoders, etc.)
  • effects of variability on low power RAM

Dr. Benton H. Calhoun
Guest Editor

Keywords

  • SRAM
  • embedded DRAM
  • low power
  • Vmin
  • circuit assists

Published Papers

No papers have been published in this special issue yet.

Last update: 26 February 2014

J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert