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Electronics 2016, 5(1), 11; doi:10.3390/electronics5010011

Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

1
Division of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA 70803, USA
2
College of Engineering, Southern University, Baton Rouge, LA 80813, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Frank Schwierz
Received: 13 September 2015 / Revised: 8 March 2016 / Accepted: 14 March 2016 / Published: 18 March 2016
(This article belongs to the Special Issue Two-Dimensional Electronics - Prospects and Challenges)
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Abstract

In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude. View Full-Text
Keywords: graphene nanoribbon FET; line-edge roughness; band-to-band-tunneling; localization regimes graphene nanoribbon FET; line-edge roughness; band-to-band-tunneling; localization regimes
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Banadaki, Y.M.; Srivastava, A. Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor. Electronics 2016, 5, 11.

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