High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs
AbstractWe report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique breakdown field close to 100 V/µm while offering high frequency performance. The low leakage current well below 1 µA/mm is achieved without using any gate dielectrics which typically degrade both the frequency performance and the device reliability. This achievement is mainly attributed to the optimization of material design and processing quality and paves the way for millimeter-wave devices operating at drain biases above 40 V, which would be only limited by the thermal dissipation. View Full-Text
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Medjdoub, F.; Kabouche, R.; Dogmus, E.; Linge, A.; Zegaoui, M. High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs. Electronics 2016, 5, 12.
Medjdoub F, Kabouche R, Dogmus E, Linge A, Zegaoui M. High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs. Electronics. 2016; 5(1):12.Chicago/Turabian Style
Medjdoub, Farid; Kabouche, Riad; Dogmus, Ezgi; Linge, Astrid; Zegaoui, Malek. 2016. "High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs." Electronics 5, no. 1: 12.
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