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Electronics 2016, 5(1), 12; doi:10.3390/electronics5010012

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR-CNRS 8520, 59652 Villeneuve d’Ascq, France
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Academic Editor: Geok Ing Ng
Received: 28 December 2015 / Revised: 11 March 2016 / Accepted: 14 March 2016 / Published: 18 March 2016
(This article belongs to the Special Issue Microwave/ Millimeter-Wave Devices and MMICs)
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Abstract

We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique breakdown field close to 100 V/µm while offering high frequency performance. The low leakage current well below 1 µA/mm is achieved without using any gate dielectrics which typically degrade both the frequency performance and the device reliability. This achievement is mainly attributed to the optimization of material design and processing quality and paves the way for millimeter-wave devices operating at drain biases above 40 V, which would be only limited by the thermal dissipation. View Full-Text
Keywords: GaN-on-Si; high breakdown voltage; low leakage current GaN-on-Si; high breakdown voltage; low leakage current
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Medjdoub, F.; Kabouche, R.; Dogmus, E.; Linge, A.; Zegaoui, M. High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs. Electronics 2016, 5, 12.

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