Next Article in Journal
Organic Optical Sensor Based on Monolithic Integration of Organic Electronic Devices
Next Article in Special Issue
High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs
Previous Article in Journal
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Previous Article in Special Issue
A 0.8–8 GHz Multi-Section Coupled Line Balun
Article Menu

Export Article

Open AccessArticle
Electronics 2015, 4(3), 614-622;

Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

Department of Electrical and Computer Engineering, Alabama Microelectronics Science and Technology Center, Auburn University, 200 Broun Hall, Auburn, AL 36849, USA
MaxLinear Inc., Carlsbad, CA 92008, USA
Author to whom correspondence should be addressed.
Academic Editor: Geok Ing Ng
Received: 3 July 2015 / Revised: 28 August 2015 / Accepted: 1 September 2015 / Published: 11 September 2015
(This article belongs to the Special Issue Microwave/ Millimeter-Wave Devices and MMICs)
View Full-Text   |   Download PDF [304 KB, uploaded 11 September 2015]   |  


This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measured IIP3. Implications to biasing current and voltage optimization for linearity are discussed. View Full-Text
Keywords: 28 nm; intermodulation; linearity; IP3; RF CMOS; high-k/metal gate 28 nm; intermodulation; linearity; IP3; RF CMOS; high-k/metal gate

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Li, Z.; Niu, G.; Liang, Q.; Imura, K. Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors. Electronics 2015, 4, 614-622.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top