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Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling
J. Low Power Electron. Appl. 2013, 3(2), 73-98; doi:10.3390/jlpea3020073

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NoteDate
Article Published21 May 2013 17:53 CEST
article pdf uploaded.21 May 2013 17:57 CEST
article latex file uploaded.21 May 2013 17:57 CEST
Article Edited22 May 2013 09:17 CEST
J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert