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Nanomaterials 2016, 6(9), 158; doi:10.3390/nano6090158

Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts

1
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Chaoyang District, Beijing 100029, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
*
Authors to whom correspondence should be addressed.
Academic Editors: Ho Won Jang and Soo Young Kim
Received: 23 June 2016 / Revised: 28 July 2016 / Accepted: 29 July 2016 / Published: 26 August 2016
(This article belongs to the Special Issue 2D Nanomaterials: Graphene and Beyond Graphene)
View Full-Text   |   Download PDF [5973 KB, uploaded 26 August 2016]   |  

Abstract

Low contact resistance between graphene and metals is of paramount importance to fabricate high performance graphene-based devices. In this paper, the impact of both defects induced by helium ion (He+) bombardment and annealing on the contact resistance between graphene and various metals (Ag, Pd, and Pt) were systematically explored. It is found that the contact resistances between all metals and graphene are remarkably reduced after annealing, indicating that not only chemically adsorbed metal (Pd) but also physically adsorbed metals (Ag and Pt) readily form end-contacts at intrinsic defect locations in graphene. In order to further improve the contact properties between Ag, Pd, and Pt metals and graphene, a novel method in which self-aligned He+ bombardment to induce exotic defects in graphene and subsequent thermal annealing to form end-contacts was proposed. By using this method, the contact resistance is reduced significantly by 15.1% and 40.1% for Ag/graphene and Pd/graphene contacts with He+ bombardment compared to their counterparts without He+ bombardment. For the Pt/graphene contact, the contact resistance is, however, not reduced as anticipated with He+ bombardment and this might be ascribed to either inappropriate He+ bombardment dose, or inapplicable method of He+ bombardment in reducing contact resistance for Pt/graphene contact. The joint efforts of as-formed end-contacts and excess created defects in graphene are discussed as the cause responsible for the reduction of contact resistance. View Full-Text
Keywords: graphene; contact resistance; helium ion bombardment; defects; end-contact graphene; contact resistance; helium ion bombardment; defects; end-contact
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Jia, K.; Su, Y.; Zhan, J.; Shahzad, K.; Zhu, H.; Zhao, C.; Luo, J. Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts. Nanomaterials 2016, 6, 158.

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