Special Issue "2D Nanomaterials: Graphene and Beyond Graphene"
A special issue of Nanomaterials (ISSN 2079-4991).
Deadline for manuscript submissions: closed (31 August 2016)
Prof. Ho Won Jang
Prof. Soo Young Kim
School of Chemical Engineering and Materials Science, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul, 06974, Republic of Korea
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Interests: graphene; metal dichalcogenides; organic/inorganic hybrid perovskite materials; organic light-emitting diodes; organic solar cells
One of grand challenges for next generation materials and devices is the precise design, control, and optimization of material nanostructures to enhance their functionalities in response to the need of emerging technologies. Therefore, the progress in the development of artificial nanostructures or nanoscale materials for novel functionalities that cannot be achieved using traditional materials has been identified as a key to realize electronic, optoelectronic, energy, sensor, bio/medical, environmental, and structural applications of advanced materials. This Special Issue focuses on two-dimensional (2D) nanomaterials, including graphene, boron nitrides, transition metal dichalcogenides, black phosphorus, and metal oxide nanosheets, with emphasis on artificial nanostructuring and tailored heterostructures to create novel functionalities or to significantly enhance existing functionalities. It covers all aspects of 2D nanomaterials, including synthesis, characterization, device fabrication, and simulations for various applications, such as electronics, optoelectronics, catalysis, batteries, fuel cells, sensors, photoelectrochemical cells, thermoelectrics, magnetoelectrics, and water/air purification. We invite the submission of review articles and original research papers from leading groups in the field of 2D nanomaterials.
Prof. Ho Won Jang
Prof. Soo Young Kim
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- 2D nanomaterials
- graphene oxide
- transition metal dichalcogenides
- boron nitride
The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.
Title: Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance
Authors: Chowdhury Al-Amin 1,*, Mustafa Karabiyik 1, Phani Kiran Vabbina1, Raju Sinha 1, and Nezih Pala1 1
Abstract: This work proposes a novel geometry field effect transistor with graphene as channel— Graphene Field-Effect Transistor (GFET), having a hybrid contact that consists of ohmic Source/Drain and its extended part towards the Gate, which is capacitively coupled to the channel. The ohmic contacts are used for DC biasing whereas their capacitive extension reduces access region length and provides the high frequency RF signal a low impedance path. Minimization of access region length along with the paralleling of ohmic contact’s resistance and resistive part of capacitively coupled contact’s impedance lower the overall Source/Drain resistance, which results in an increases current gain cut-off frequency, fT. The DC and high-frequency characteristics of two chosen conventional baseline GFETs and their modified versions with proposed hybrid contacts have been extensively studied, compared, and analyzed using numerical and analytical techniques.