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Appl. Sci. 2018, 8(7), 1104; https://doi.org/10.3390/app8071104

Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

1
School of Engineering Physics, Hanoi University of Science and Technology, No. 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam
2
Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
3
Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
*
Author to whom correspondence should be addressed.
Received: 26 May 2018 / Revised: 19 June 2018 / Accepted: 29 June 2018 / Published: 9 July 2018
(This article belongs to the Special Issue Highly Efficient UV and Visible Light Sources)
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Abstract

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW. View Full-Text
Keywords: semiconductor laser; narrow linewidth; high power diode laser; front facet reflectivity semiconductor laser; narrow linewidth; high power diode laser; front facet reflectivity
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Nguyen, T.-P.; Wenzel, H.; Brox, O.; Bugge, F.; Ressel, P.; Schiemangk, M.; Wicht, A.; Quoc Tien, T.; Tränkle, G. Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power. Appl. Sci. 2018, 8, 1104.

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