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Appl. Sci. 2018, 8(5), 818; https://doi.org/10.3390/app8050818

Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”

STR Group—Soft-Impact, Ltd., P.O. Box 83, 27 Engels Ave., 194156 St. Petersburg, Russia
Received: 16 March 2018 / Revised: 3 May 2018 / Accepted: 17 May 2018 / Published: 18 May 2018
(This article belongs to the Special Issue Highly Efficient UV and Visible Light Sources)
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Abstract

A semi-empirical model of carrier recombination accounting for hole localization by composition fluctuations in InGaN alloys is extended to polar and nonpolar quantum-well structures. The model provides quantitative agreement with available data on wavelength-dependent radiative and Auger recombination coefficients in polar LEDs. Comparison of calculated internal quantum efficiencies of polar and nonpolar LEDs enables an assessment of the roles of carrier localization, quantum-confined Stark effect, and native material properties for the efficiency decline in the “green gap”. View Full-Text
Keywords: InGaN; light-emitting diodes; efficiency; Auger recombination; “green gap”; recombination coefficients; carrier localization; composition fluctuations; quantum-confined Stark effect InGaN; light-emitting diodes; efficiency; Auger recombination; “green gap”; recombination coefficients; carrier localization; composition fluctuations; quantum-confined Stark effect
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Karpov, S.Y. Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”. Appl. Sci. 2018, 8, 818.

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