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Micromachines 2018, 9(1), 5; doi:10.3390/mi9010005

Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance

State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
This paper is an extended version of our paper accepted in the 13th International Symposium on Measurement Technology and Intelligent Instruments, Xi’an, China, 22–25 September 2017.
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Received: 20 November 2017 / Revised: 16 December 2017 / Accepted: 21 December 2017 / Published: 25 December 2017
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Abstract

Ultra-high pressure measurement has significant applications in various fields such as high pressure synthesis of new materials and ultra-high pressure vessel monitoring. This paper proposes a novel ultra-high pressure sensor combining a truncated-cone structure and a silicon-on-insulator (SOI) piezoresistive element for measuring the pressure up to 1.6 GPa. The truncated-cone structure attenuates the measured pressure to a level that can be detected by the SOI piezoresistive element. Four piezoresistors of the SOI piezoresistive element are placed along specific crystal orientation and configured as a Wheatstone bridge to obtain voltage signals. The sensor has an advantage of high-temperature resistance, in that the structure of the piezoresistive element can avoid the leakage current at high temperature and the truncated-cone structure separates the piezoresistive element from the heat environment. Furthermore, the upper surface diameter of the truncated-cone structure is designed to be 2 mm for the application of small scale. The results of static calibration show that the sensor exhibits a good performance in hysteresis and repeatability. The temperature experiment indicates that the sensor can work steadily at high temperature. This study would provide a better insight to the research of ultra-high pressure sensors with larger range and smaller size. View Full-Text
Keywords: ultra-high pressure sensor; silicon-on-insulator (SOI) piezoresistive element; small size; high-temperature resistance; microelectromechanical systems (MEMS) technology ultra-high pressure sensor; silicon-on-insulator (SOI) piezoresistive element; small size; high-temperature resistance; microelectromechanical systems (MEMS) technology
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Zhang, G.-D.; Zhao, Y.-L.; Zhao, Y.; Wang, X.-C.; Wei, X.-Y. Research of a Novel Ultra-High Pressure Sensor with High-Temperature Resistance. Micromachines 2018, 9, 5.

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