Uncertainty Quantification of Microstructure—Governed Properties of Polysilicon MEMS
AbstractIn this paper, we investigate the stochastic effects of the microstructure of polysilicon films on the overall response of microelectromechanical systems (MEMS). A device for on-chip testing has been purposely designed so as to maximize, in compliance with the production process, its sensitivity to fluctuations of the microstructural properties; as a side effect, its sensitivity to geometrical imperfections linked to the etching process has also been enhanced. A reduced-order, coupled electromechanical model of the device is developed and an identification procedure, based on a genetic algorithm, is finally adopted to tune the parameters ruling microstructural and geometrical uncertainties. Besides an initial geometrical imperfection that can be considered specimen-dependent due to its scattering, the proposed procedure has allowed identifying an average value of the effective polysilicon Young’s modulus amounting to 140 GPa, and of the over-etch depth with respect to the target geometry layout amounting to
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Mirzazadeh, R.; Mariani, S. Uncertainty Quantification of Microstructure—Governed Properties of Polysilicon MEMS. Micromachines 2017, 8, 248.
Mirzazadeh R, Mariani S. Uncertainty Quantification of Microstructure—Governed Properties of Polysilicon MEMS. Micromachines. 2017; 8(8):248.Chicago/Turabian Style
Mirzazadeh, Ramin; Mariani, Stefano. 2017. "Uncertainty Quantification of Microstructure—Governed Properties of Polysilicon MEMS." Micromachines 8, no. 8: 248.
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