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Micromachines 2016, 7(10), 174; doi:10.3390/mi7100174

In-Situ Testing of the Thermal Diffusivity of Polysilicon Thin Films

Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China
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Academic Editor: Hiroshi Toshiyoshi
Received: 27 July 2016 / Revised: 17 September 2016 / Accepted: 20 September 2016 / Published: 1 October 2016
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Abstract

This paper presents an intuitive yet effective in-situ thermal diffusivity testing structure and testing method. The structure consists of two doubly clamped beams with the same width and thickness but different lengths. When the electric current is applied through two terminals of one beam, the beam serves as thermal resistor and the resistance R(t) varies as temperature rises. A delicate thermodynamic model considering thermal convection, thermal radiation, and film-to-substrate heat conduction was established for the testing structure. The presented in-situ thermal diffusivity testing structure can be fabricated by various commonly used micro electro mechanical systems (MEMS) fabrication methods, i.e., it requires no extra customized processes yet provides electrical input and output interfaces for in-situ testing. Meanwhile, the testing environment and equipment had no stringent restriction, measurements were carried out at normal temperatures and pressures, and the results are relatively accurate. View Full-Text
Keywords: thermal diffusivity; process control monitoring (PCM); in-situ testing; thin film thermal diffusivity; process control monitoring (PCM); in-situ testing; thin film
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Gu, Y.-F.; Zhou, Z.-F.; Sun, C.; Li, W.-H.; Huang, Q.-A. In-Situ Testing of the Thermal Diffusivity of Polysilicon Thin Films. Micromachines 2016, 7, 174.

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