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Micromachines 2012, 3(2), 345-363; doi:10.3390/mi3020345

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

Oracle Labs, Oracle, 9515 Towne Centre Drive, San Diego, CA 92121, USA
Kotura Inc., 2630 Corporate Place, Monterey Park, CA 91754, USA
Author to whom correspondence should be addressed.
Received: 15 March 2012 / Revised: 6 April 2012 / Accepted: 18 April 2012 / Published: 26 April 2012
(This article belongs to the Special Issue Nano-photonic Devices)
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We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with high selectivity and precise control of silicon content. Fabricated vertical p-i-n diodes exhibit very low dark current density of 5 mA/cm2 at −1 V bias. Under a 7.5 V/µm E-field, GeSi alloys with 0.6% Si content demonstrate very strong electro-absorption with an estimated effective ∆α/α around 3.5 at 1,590 nm. We compared measured ∆α/α performance to that of bulk Ge. Optical modulation up to 40 GHz is observed in waveguide devices while small signal analysis indicates bandwidth is limited by device parasitics.
Keywords: electro-absorption; germanium silicon; Franz-Keldysh effect; selective epitaxial growth electro-absorption; germanium silicon; Franz-Keldysh effect; selective epitaxial growth
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Luo, Y.; Zheng, X.; Li, G.; Shubin, I.; Thacker, H.; Yao, J.; Lee, J.-H.; Feng, D.; Fong, J.; Kung, C.-C.; Liao, S.; Shafiiha, R.; Asghari, M.; Raj, K.; Krishnamoorthy, A.V.; Cunningham, J.E. Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI). Micromachines 2012, 3, 345-363.

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