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Materials 2017, 10(3), 222; doi:10.3390/ma10030222

All-Aluminum Thin Film Transistor Fabrication at Room Temperature

1
State Key Laboratory of Luminescent Materialsand Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China
2
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
*
Authors to whom correspondence should be addressed.
Academic Editors: Pedro Barquinha and Maryam Tabrizian
Received: 7 December 2016 / Revised: 16 February 2017 / Accepted: 20 February 2017 / Published: 23 February 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
View Full-Text   |   Download PDF [2745 KB, uploaded 23 February 2017]   |  

Abstract

Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM) and X-ray reflectivity (XRR) revealed the smooth interfaces between ~2.2-nm-thick Al2O3 layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd) and pure Al, with Al2O3/AZO multilayered channel and AlOx:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm2/V·s and an Ion/Ioff ratio of 106. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials. View Full-Text
Keywords: thin film transistor; conductor/insulator heterojunction; all-aluminum; room temperature thin film transistor; conductor/insulator heterojunction; all-aluminum; room temperature
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Yao, R.; Zheng, Z.; Zeng, Y.; Liu, X.; Ning, H.; Hu, S.; Tao, R.; Chen, J.; Cai, W.; Xu, M.; Wang, L.; Lan, L.; Peng, J. All-Aluminum Thin Film Transistor Fabrication at Room Temperature. Materials 2017, 10, 222.

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